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HUF76009D3ST-VB Product details
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HUF76009D3ST-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. Trench technology balances extremely low conduction loss with excellent switching characteristics. The TO252 package achieves a good balance between heat dissipation and soldering process convenience. With a 20V withstand voltage, 100A current carrying capacity, and 4.5mΩ on-resistance, it is an ideal choice for low-voltage, high-density power modules, power tools, and communication equipment power supplies, especially for applications requiring high current throughput and a compact footprint.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6(mΩ) | 4.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
VDS=20V: Suitable for 3.3V/5V/12V low-voltage systems, provides sufficient voltage margin for switching node spikes, enhancing circuit reliability.
VGS=±20V: Wide gate drive range, compatible with 2.5V~12V logic levels, can directly interface with MCU/PWM controllers, simplifying drive circuit design.
Vth=0.5~1.5V: Low threshold voltage ensures full conduction under low-voltage drive conditions, suitable for battery-powered and low-voltage rail applications.
RDS(on)=6mΩ @ VGS=2.5V: Extremely low on-resistance even at 2.5V low-voltage drive, significantly reducing conduction losses.
RDS(on)=4.5mΩ @ VGS=4.5V: On-resistance further reduced under standard logic level drive, lower temperature rise under full load, enabling smaller heatsink size.
ID=100A: Strong continuous current capability, meeting high-power load startup, stall, and transient surge requirements, with ample reliability margin.
Package TO252: Low thermal resistance, short heat dissipation path, supports high power dissipation, compatible with standard SMT processes, facilitating mass production.
Domain and module applications：
Low Voltage High Current DC-DC Converters: Replaces multiple parallel MOSFETs in synchronous rectification or power stage applications, simplifying the circuit and improving heavy-load efficiency.
Motor Drive Modules: Extremely low on-resistance supports high current output, low PWM switching loss, suitable for power tools, model cars, and low-voltage servo drives.
Battery Protection and Management Systems: Milliohm-level on-resistance reduces protection board heat generation, 100A current capability meets high-rate charge/discharge scenario requirements.
Power Sockets and Smart Switches: Fully turns on with low-voltage drive, supports high-power load switching, reduces overall system power consumption.
Server and Communication Power Supplies: Acts as a rectifier switch in 12V voltage rails, efficient with low heat, aiding in power module power density improvement.
Automotive Low Voltage Auxiliary Loads: Has sufficient voltage and current margin in 12V automotive bus environments, adapting to wide temperature operating conditions in the engine compartment. Selection Summary: HUF76009D3ST-VB achieves an ideal balance between ultra-low on-resistance, high current carrying capacity, and the heat dissipation advantages of the TO252 package. It is a high-performance general-purpose choice for 20V low-voltage high-current switching applications, particularly suitable for power supply and motor control systems with strict requirements for efficiency and thermal reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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