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MTD6N20E1-VB Product details

Product introduction:

MTD6N20E1-VB is a high-voltage, high-current N-channel MOS transistor in a TO252 package, with a 200V withstand voltage and 10A current carrying capacity. Enhanced by Trench technology, it features a low on-resistance of 245mΩ, resulting in low switching losses and high reliability. The gate drive is flexible, with a wide ±20V range, making it adaptable to various medium and high voltage control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 200V 3V 10A 245(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Drain-Source Voltage: 200V
Gate Drive Voltage: ±20V
Threshold Voltage: 3V
On-Resistance (at 10V drive): 245 mΩ
Maximum Current: 10A
Package: TO252

Domain and module applications:


Switching Power Supplies → High voltage conversion, stable and efficient
AC-DC Adapters → Primary side switch, high reliability
Motor Drives → High voltage drive, fast response
LED Lighting Power Supplies → Constant current control, energy-saving and durable
Industrial Control Modules → Strong anti-interference, suitable for harsh environments
Battery Charge Management → High voltage cutoff, safety protection
DC-DC Boost Circuits → Synchronous rectification, better efficiency
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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