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TK60S10N1L,LXHQ-VB Product details

Product introduction:

The TK60S10N1L,LXHQ-VB is a Single N-MOS deeply optimized for medium-voltage, high-current power switching scenarios. The Trench process achieves an excellent balance between low on-resistance and fast switching capability, and the TO252 package combines good thermal performance with a compact footprint. The combination of 100V withstand voltage, 100A current carrying capacity, and 5mΩ on-resistance makes it a high-reliability core device for low-voltage high-power conversion, motor drives, and battery protection applications, especially suitable for industrial-grade and automotive-grade scenarios with strict efficiency and temperature rise requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 3V 100A 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N

VDS=100V: Suitable for 12V/24V/48V/60V systems, with ample voltage margin to effectively absorb switching spikes and reduce avalanche breakdown risk.
VGS=±20V: Compatible with 3.3V~12V logic level drive, flexibly adapting to MCU/PMIC or dedicated gate drivers, simplifying peripheral circuit design.
Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, while ensuring full conduction under 10V drive, suitable for standard gate drive schemes.
RDS(on)=5mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction loss at full load, significantly reducing device temperature rise, minimizing heatsink or copper area requirements.
ID=100A: Ample continuous current capability, capable of handling transient peak currents of high-power loads, suitable for high surge conditions.
Package TO252: Mainstream DPAK package, low thermal resistance, mature soldering process, balancing heat dissipation performance and automated SMT efficiency, suitable for high-current PCB layout.

Domain and module applications:


High-power DC-DC Converters: Ultra-low on-resistance significantly improves synchronous rectification efficiency, showing a notable efficiency improvement over traditional Schottky solutions under heavy load, beneficial for module power density enhancement.
Motor Drive Controllers: 100V voltage withstand covers brushed/brushless motor bus voltage; 5mΩ internal resistance reduces PWM switching losses, aiding controller miniaturization and long-life design.
Battery Protection and Management Systems: High current carrying capacity meets high-rate charge/discharge demands of energy storage and power tools; fast switching characteristics ensure reliable protection during overcurrent/short circuit.
Automotive Power Supplies and Body Control Modules: Wide voltage withstand margin and good heat dissipation capability of TO252 adapt to 12V/24V vehicle bus environments, operating stably under harsh conditions like startup and load transients.
Server and Communication Power Supplies: 100A high current capability combined with low conduction losses, suitable for high-efficiency rectification stages and power factor correction circuits, reducing overall system power consumption.
UPS and Inverters: As the main power switch, low RDS(on) reduces power stage heating, improves overall overload capacity and reliability, simplifying thermal design. Selection Summary: TK60S10N1L,LXHQ-VB achieves the best balance between 100V voltage withstand, 100A high current, 5mΩ ultra-low on-resistance, and TO252 package. It is a cost-effective general-purpose choice for medium-voltage, high-power switching applications, especially suitable for power supply and drive projects with stringent requirements on efficiency, temperature rise, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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