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2SK3617-E-VB Product details

Product introduction:

2SK3617-E-VB is a high-performance, high-current N-channel MOSFET in TO252 package, with 100V withstand voltage and 15A current capacity. Featuring Trench technology, its on-resistance is as low as 114mΩ, resulting in low loss and high reliability. The gate drive is flexible with a wide ±20V range, suitable for various industrial and power control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 15A 114(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Voltage Rating: 100V
Drive Voltage: ±20V
Threshold Voltage: 1.8V
On-Resistance (10V Drive): 114 mΩ
Maximum Current: 15A
Package: TO252

Domain and module applications:


DC-DC Converters → Efficient synchronous rectification, reduced power consumption
Power Adapters and Chargers → Stable switching control, improved energy efficiency
Motor Drive and Speed Control → High current capacity, fast response
Battery Charge/Discharge Protection → Reliable cutoff, extended battery life
Industrial Control and Automation → High voltage tolerance, impact resistance, adapts to harsh environments
LED Lighting Drive → Precise dimming, excellent heat dissipation
Vehicle Auxiliary Power → Wide temperature operation, stable power supply
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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