Product introduction：
Troubled by conduction losses and board area in low-voltage dual-channel power switches? VBsemi MMDF7N02ZR2-VB is here to help! This SOP8-packaged Dual N+N MOS transistor integrates two independent N-MOS channels, achieving a continuous current carrying capacity of 7.1A in a compact space. With a low on-resistance of 19mΩ at 10V drive, heat generation is significantly reduced. Trench technology delivers excellent switching characteristics and low gate charge, and the 20V withstand voltage perfectly suits various low-voltage DC-DC, load switch, and battery management scenarios, making it an engineer's "dual-channel efficiency tool."
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
26(mΩ) |
19(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Drain-Source Voltage (VDS): 20V (precise matching for low-voltage applications, ample margin)
Gate-Source Voltage (VGS): ±12V (compatible with 3.3V/5V logic drive)
Threshold Voltage (Vth): 0.5~1.5V (easily turned on by low-voltage control signals)
Ultra-Low On-Resistance: 19mΩ @ 10V, 26mΩ @ 4.5V (extremely low conduction loss)
High Current Capability: 7.1A (dual channel total, high power in small package)
Package: SOP8 (standard SMT, suitable for high-density design)
Technology: Trench (fast switching, low loss, excellent thermal performance)
Domain and module applications：
– Six Popular Scenarios, Dual Channel Handles with Ease
DC-DC Conversion: Synchronous rectification or half-bridge topology, dual N-MOS integration simplifies layout, improves efficiency
Load Switch: Power path management for portable devices, low on-resistance reduces voltage drop, extends battery life
Battery Protection: Dual channels independently control charge and discharge loops, fast response, safeguarding cell safety
Motor Drive: Small DC motor forward/reverse control, one component builds half of an H-bridge, saving space
Multiple Power Outputs: Dual channels operate independently for multi-rail regulation or sequencing control, flexible and reliable
LED Lighting: Low-voltage constant current drive and dimming switch, low conduction losses reduce temperature rise, more stable brightness
MMDF7N02ZR2-VB – Dual N integrated, low voltage, high efficiency, making your power design more compact and effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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