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MTDF1C02HDR2-VB Product details
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Imagine: You are designing a compact power management module with limited board space, yet you need to handle power switching for both positive and negative rails. Ordinary discrete solutions take up too much area and have uncontrollable parasitic parameters. VBsemi MTDF1C02HDR2-VB is designed for this—it integrates a complementary N+P channel MOSFET pair in an ultra-small MSOP8 package, supporting 6A and -5A current capabilities respectively, with low on-resistance and Trench technology, making high-density dual-channel switching design simple and efficient.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| MSOP8 | Dual-N+P | ±30V | 1.6/-1.75V | 6A/-5A | 30/60(mΩ) | 22/45(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| MSOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| MSOP8 | Dual-N+P | ±30V | 1.6/-1.75V | 6A/-5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| MSOP8 | Dual-N+P | ±30V | 1.6/-1.75V | 6A/-5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| MSOP8 | Dual-N+P |
- Drain-Source Voltage ±30V, meeting most low-voltage rail applications with safety margin
- Gate drive range ±20V, compatible with 2.5V~12V logic levels
- Threshold voltage N-channel 1.6V / P-channel -1.75V, can be directly driven by low voltage
- On-resistance (10V drive) N-channel 22mΩ / P-channel 45mΩ; at 4.5V drive N/P are 30mΩ / 60mΩ respectively, low loss, minimal heat generation
- Maximum current N-channel 6A / P-channel -5A, stable output capability in small package
- Uses Trench technology, excellent switching characteristics, suitable for high-frequency operation
- Gate drive range ±20V, compatible with 2.5V~12V logic levels
- Threshold voltage N-channel 1.6V / P-channel -1.75V, can be directly driven by low voltage
- On-resistance (10V drive) N-channel 22mΩ / P-channel 45mΩ; at 4.5V drive N/P are 30mΩ / 60mΩ respectively, low loss, minimal heat generation
- Maximum current N-channel 6A / P-channel -5A, stable output capability in small package
- Uses Trench technology, excellent switching characteristics, suitable for high-frequency operation
Domain and module applications：
- **Synchronous Buck/Boost DC-DC Modules** – Utilize integrated N+P complementary pairs to simplify half-bridge driver design, improve conversion efficiency, and save PCB area.
- **Battery Charge/Discharge Management** – N-channel for high-current charging paths, P-channel for discharging or load switching, dual-channel collaboration enables fast overcurrent and short-circuit protection.
- **Portable Device Power Path Management** – In compact spaces like power banks and TWS earbud cases, simultaneously achieve input isolation and output switching.
- **Motor Drive/Power Tools** – Complementary N+P pairs directly drive small DC motors, offering more flexible forward/reverse control, low conduction loss, and extended battery life.
- **LED Lighting and Constant Current Drive** – Independently control high-side and low-side switches for precise PWM dimming and flicker-free constant current output.
- **Signal Level Shifting/Analog Switches** – Dual-channel complementary structure suitable for low-distortion switching scenarios such as audio signal routing and I/O level matching.
- **Industrial Sensors and Transmitters** – Withstand ±30V voltage fluctuations, providing reliable power switching and isolation control for control loops. **One-sentence summary:** The MTDF1C02HDR2-VB is not just an ordinary MOSFET; it is your "Integration Master" for compact dual-channel positive and negative power supply designs, delivering efficiency and flexibility in a tiny package.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
