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CPH6314-TL-E-VB Product details
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Imagine: You are designing a high-density power management module with tight board space, yet you need to handle a load current of -4.8A while also ensuring low heat and fast turn-off. Ordinary P-channel MOS transistors either have too high conduction voltage drop or bulky packages. VBsemi CPH6314-TL-E-VB is designed for this—it integrates -30V withstand voltage, -4.8A current carrying capacity, and an on-resistance as low as 49mΩ into a compact SOT23-6 package, making power path design for portable devices and battery-powered systems more effortless.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 54(mΩ) | 49(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**Product Parameters (Performance Data)**
- Voltage rating -30V, covering common low-voltage battery and load management scenarios
- Gate drive range ±20V, compatible with various logic level drives
- Threshold voltage -1.7V, reliable turn-on with low-voltage control signals
- On-resistance 49mΩ (10V drive), 54mΩ (4.5V drive), lower power loss
- Maximum current -4.8A, small package can handle considerable power
- Uses Trench technology, balancing switching performance and conduction characteristics
- Voltage rating -30V, covering common low-voltage battery and load management scenarios
- Gate drive range ±20V, compatible with various logic level drives
- Threshold voltage -1.7V, reliable turn-on with low-voltage control signals
- On-resistance 49mΩ (10V drive), 54mΩ (4.5V drive), lower power loss
- Maximum current -4.8A, small package can handle considerable power
- Uses Trench technology, balancing switching performance and conduction characteristics
Domain and module applications：
- **Battery Protection Board / Charge Management** – Used as a load switch or discharge path control transistor, quickly cutting off the circuit during overcurrent or over-discharge to protect battery safety.
- **Portable Device Power Path Management** – Utilizes low on-resistance and SOT23-6 small size to save PCB area for TWS earphones, smart bracelets, etc.
- **DC-DC Converter** – Used for synchronous rectification or load switch in buck or boost topologies, improving light-load efficiency.
- **Motor Drive / Fan Control** – Used as a low-side or high-side switch for unidirectional motors or fans, enabling smooth speed control and low standby power consumption.
- **Industrial Sensor Output Interface** – Used as an open-drain output or load drive switch, withstanding -30V voltage stress, enhancing system reliability.
- **Automotive Auxiliary Electronics** – Used for on/off control of power rails in dashcams and sensors, adapting to voltage fluctuation environments.**One-sentence summary**: CPH6314-TL-E-VB is not an ordinary P-channel MOS transistor; with its compact package, low on-resistance, and wide drive range, it acts as a 'space optimizer' and 'energy gatekeeper' for low-voltage battery systems and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
