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PMN50UPE,115-VB Product details

Product introduction:

PMN50UPE,115-VB is a small-package, low-power P-channel MOS transistor in SOT23-6 package, with -30V withstand voltage and -4.8A current carrying capacity. With Trench process, the on-resistance is as low as 49mΩ (10V drive), resulting in low heat and high efficiency. The gate drive is flexible with a wide range of ±20V, suitable for most low-voltage control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 54(mΩ) 49(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
Voltage Rating: -30V
Drive Voltage: ±20V
Turn-On Threshold: -1.7V
On-Resistance (4.5V Drive): 54 mΩ
On-Resistance (10V Drive): 49 mΩ
Maximum Current: -4.8A
Package: SOT23-6

Domain and module applications:


Battery Charge/Discharge Protection → Safe cutoff, extends battery life
Load Switch → Clean on/off, low voltage drop
Power Management Module → Low loss, improved efficiency
Low-Power Inverter Circuit → Fast response, stable and reliable
Portable Device Power Supply → Space saving, suitable for compact designs
LED Drive Dimming → Uniform brightness, energy saving
DC-DC Converter → Synchronous rectification, better efficiency
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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