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SQ3457CEV-T1_GE3-VB Product details

Product introduction:

SQ3457CEV-T1_GE3-VB is a Single P-MOS deeply optimized for low-voltage power switch applications. The Trench process balances low switching loss and high reliability, while the SOT23-6 package strikes a balance between heat dissipation and board space. The combination of 30V withstand voltage, 4.8A current capability, and 49mΩ on-resistance makes it an ideal choice for high-density power management, battery protection, and load switch applications, especially suitable for space- and cost-sensitive portable and automotive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 54(mΩ) 49(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
Key Selection Criteria
VDS=-30V: Suitable for negative voltage switching or power rail control in 5V/12V/24V systems, providing sufficient voltage margin for spikes and reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly interface with MCU/PMIC, eliminating level-shifting circuits.
Vth=-1.7V (Typical): Fully turns on even with low gate drive, ideal for battery voltage decay scenarios.
RDS(on)=49mΩ @ VGS=10V: Low on-resistance ensures controlled temperature rise under full load, reducing required copper area for heat dissipation.
ID=-4.8A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package SOT23-6: Small footprint, low parasitic parameters, supports high-frequency switching, saving PCB area and assembly cost.

Domain and module applications:


Decision Value Analysis
Portable Device Power Management: Low internal resistance improves load switch efficiency, extends battery life, and small packaging enables ultra-thin designs.
Battery Protection Module: Fast response ensures microsecond shutdown during overcurrent/short circuit, and low internal resistance reduces self-heating of the protection board.
Negative Rail Shutdown: P-MOS is suitable for high-side switch applications, enabling low-loss power path control and simplifying drive circuits.
Low-Voltage Motor Drive: Low PWM switching losses, smoother motor operation, significantly reduced controller temperature rise.
Consumer Electronics Control Module: Logic-level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Driver: Low on-resistance reduces constant current source power loss, supports multiple parallel branches, improving overall light efficiency.
DC-DC Converter: Replaces traditional diodes in load switches or reverse polarity protection, improving efficiency under heavy load, facilitating module miniaturization.
Automotive Auxiliary Power: Voltage margin and wide operating temperature range adapt to 12V automotive bus, high reliability. Selection Summary: SQ3457CEV-T1_GE3-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 30V low-voltage P-MOS switch applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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