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SI3425DV-T1-GE3-VB Product details
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Troubled by high heat generation and package limitations in negative voltage power conversion? Let VBsemi SI3425DV-T1-GE3-VB help! This P-MOS transistor in SOT23-6 package has a compact size yet delivers -4.8A current capability, with an on-resistance as low as 49mΩ @ 10V, offering better power performance than similar devices. The Trench process provides excellent switching characteristics and low loss, and the -30V withstand voltage easily adapts to common scenarios like battery-powered applications and load switches, making it an indispensable "negative voltage switch weapon" for engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 54(mΩ) | 49(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Voltage Rating: -30V (Ample negative voltage margin for safer applications)
Drive Range: ±20V (Compatible with 3.3V/5V/12V logic drive)
Threshold Voltage: -1.7V (Reliably turned on with low-voltage control signals)
Ultra-Low On-Resistance: 49mΩ @ 10V, 54mΩ @ 4.5V (Extremely low conduction loss)
Current Capability: -4.8A (Small package carrying high current)
Package: SOT23-6 (Suitable for high-density compact layouts)
Technology: Trench (Fast switching, low loss, excellent thermal performance)
Drive Range: ±20V (Compatible with 3.3V/5V/12V logic drive)
Threshold Voltage: -1.7V (Reliably turned on with low-voltage control signals)
Ultra-Low On-Resistance: 49mΩ @ 10V, 54mΩ @ 4.5V (Extremely low conduction loss)
Current Capability: -4.8A (Small package carrying high current)
Package: SOT23-6 (Suitable for high-density compact layouts)
Technology: Trench (Fast switching, low loss, excellent thermal performance)
Domain and module applications：
– Six Typical Scenarios, One Chip Covers All
Battery Protection: Precise cutoff for over-discharge/overcurrent, protecting cell safety
Load Switch: Power management for portable devices, lower standby power consumption
DC-DC Conversion: Negative voltage buck/inverter circuits, superior efficiency
Motor Drive: Small fans and pumps, smooth speed control without stuttering
LED Lighting: Stable constant current control, uniform brightness without flicker
Industrial Sensing: Signal conditioning and power switching, reliable response and long life
SI3425DV-T1-GE3-VB – Small package, low internal resistance, high reliability, injecting ease and efficiency into your negative voltage power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
