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MGSF3442XT1-VB Product details

Product introduction:

MGSF3442XT1-VB is a small-size, high-efficiency N-channel MOS transistor, packaged in SOT23-6, with 30V withstand voltage and 6A current carrying capacity. Using Trench technology, the on-resistance is as low as 26mΩ (10V drive), resulting in low heat generation and low loss. The gate drive is flexible, supporting 4.5V logic level drive and a ±20V wide gate voltage range, compatible with various low-voltage control circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-N 30V 1.7V 6A 27(mΩ) 26(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-N 30V 1.7V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-N 30V 1.7V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-N
Drain-Source Voltage: 30V
Gate-Source Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (VGS=4.5V): 27 mΩ
On-Resistance (VGS=10V): 26 mΩ
Maximum Current: 6A
Package: SOT23-6
Technology: Trench

Domain and module applications:


Battery charge/discharge protection → Fast cutoff, safe and reliable
Small fans, toy motors → Sensitive speed regulation, quick response
Smart sockets, USB switches → Clean on/off, low heat generation
LED strip dimming → Uniform brightness, energy saving
DC-DC modules → Synchronous rectification, better efficiency
Automotive auxiliary power → Vibration resistant, good temperature tolerance, stable power supply
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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