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CPH6604-TL-E-VB Product details
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Imagine you are designing a compact BLDC motor driver board, needing to fit a dual N-channel power stage while keeping PCB area small and thermal stress low. Traditional discrete solutions often require two separate MOS transistors, taking up more space and complicating routing. VBsemi CPH6604-TL-E-VB is designed for this—it integrates two N-channel MOS transistors with 40V withstand voltage and 3.6A current capability into a SOT23-6 package, using a Dual N+N configuration with Trench technology, making high-density power switching design simpler and more efficient.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | 72(mΩ) | 58(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Drain-Source Voltage 40V, meeting most low-voltage bus and battery-powered scenarios
Gate Drive Range ±20V, compatible with 1.8V~12V logic levels
Threshold Voltage 1.8V, reliable turn-on even with low-voltage drive
On-Resistance 58mΩ (at 10V drive), maintaining low loss in dual-transistor integration
Maximum Current 3.6A, achieving dual-channel power switch in a small package
Gate Drive Range ±20V, compatible with 1.8V~12V logic levels
Threshold Voltage 1.8V, reliable turn-on even with low-voltage drive
On-Resistance 58mΩ (at 10V drive), maintaining low loss in dual-transistor integration
Maximum Current 3.6A, achieving dual-channel power switch in a small package
Domain and module applications：
Real-World Scenarios
BLDC Motor Drive – The dual N-channel structure is ideal for H-bridge or half-bridge topologies, simplifying wiring and reducing driver footprint.
Lithium Battery Protection Circuit – Two MOS transistors in series for charge and discharge circuits, quickly cutting off during overcurrent/short circuit to protect cell safety.
DC-DC Synchronous Rectification – Uses a Dual-N+N configuration to replace two discrete MOS transistors, improving efficiency and reducing size in buck-boost modules.
Load Switch/Power Path Management – One path for main power supply, one for backup, enabling seamless switching and saving peripheral components.
Smoke Alarm/Sensor Module – Low on-resistance and low threshold voltage enable more precise power consumption control, extending battery life.
Smart Lock/Portable Device – Compact dual-channel design allows motor drive and power control to be completed simultaneously in a very small space.
LED Drive and Dimming – Works with PWM control, fast switching speed, low heat generation, and more stable color accuracy and brightness performance. One-sentence summary: The CPH6604-TL-E-VB is not a simple combination of two ordinary MOS transistors; it is the 'space halving' and 'performance addition' for your compact dual-channel power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
