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CPH6603-TL-E-VB Product details
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Imagine you are designing a compact battery management system with tight PCB area, needing to handle two power switches simultaneously while ensuring low heat generation and high reliability. Traditional discrete MOS transistors take up more space and have suboptimal heat dissipation. VBsemi CPH6603-TL-E-VB is designed for this—it integrates two N-channel MOSFETs in a compact SOT23-6 package, offering 40V withstand voltage, 3.6A continuous current capability, and low on-resistance of 58mΩ, providing an elegant solution for multi-channel power control, making high-density circuit design more manageable.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | 72(mΩ) | 58(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 40V | 1.8V | 3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
- Drain-Source Voltage 40V, covering most low-voltage power supply and battery applications
- Gate Drive Range ±20V, compatible with multiple logic level drives
- Threshold Voltage 1.8V, reliable turn-on with low-voltage control signals
- On-Resistance 58mΩ (at 10V drive) / 72mΩ (at 4.5V drive), low loss and minimal temperature rise
- Maximum Current 3.6A, dual N+N configuration flexibly handles series and parallel topologies
- Trench technology for excellent switching characteristics
- SOT23-6 package, saving PCB area, suitable for compact designs
- Gate Drive Range ±20V, compatible with multiple logic level drives
- Threshold Voltage 1.8V, reliable turn-on with low-voltage control signals
- On-Resistance 58mΩ (at 10V drive) / 72mΩ (at 4.5V drive), low loss and minimal temperature rise
- Maximum Current 3.6A, dual N+N configuration flexibly handles series and parallel topologies
- Trench technology for excellent switching characteristics
- SOT23-6 package, saving PCB area, suitable for compact designs
Domain and module applications：
- **Battery Protection Board** – Dual MOS integration, can simultaneously manage charge and discharge circuits, quickly shut off during overcurrent/short circuit, protecting cell safety.
- **DC-DC Converter** – Used as a rectifier/switch in synchronous buck or boost circuits, improving conversion efficiency and reducing module size.
- **Load Switch** – For power rail on/off control in portable devices, low on-resistance reduces voltage drop and power loss.
- **Motor Drive** – Drives small DC motors or fans, dual-channel design facilitates H-bridge or half-bridge circuit construction.
- **LED Lighting Control** – Enables constant current or PWM dimming, fast switching speed with no visible flicker.
- **Power Tools and Handheld Devices** – Withstands battery voltage fluctuations, providing stable and efficient power switching. **One-sentence summary: The CPH6603-TL-E-VB is your 'dual-core tool' in multi-channel low-voltage power designs, combining dual N-channel performance in a compact package, bringing efficiency and reliability to space-constrained applications.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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