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SI125P06L-TP-VB Product details

Product introduction:

SI125P06L-TP-VB is a compact, high-current P-channel MOSFET in SOT23-3 package, with -60V withstand voltage and -5.2A current capability. Leveraging Trench technology, it features low on-resistance of 50mΩ, low heat generation, and high efficiency. Gate drive is flexible with a ±20V wide range, suitable for most low-voltage control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -60V -1.7V -5.2A 52(mΩ) 50(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P -60V -1.7V -5.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P -60V -1.7V -5.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P
Voltage Rating: -60V
Drive Voltage: ±20V
Threshold Voltage: -1.7V
On-Resistance (10V Drive): 50 mΩ
On-Resistance (4.5V Drive): 52 mΩ
Maximum Current: -5.2A
Package: SOT23-3
Technology: Trench

Domain and module applications:


Battery Charge/Discharge Protection → Safe cutoff, extends battery life
Load Switch → Clean on/off, no heat generation
Power Reverse Polarity Protection → Low loss, reliable protection
LED Strip Dimming → Uniform brightness, energy saving
DC-DC Module → Synchronous rectification, better efficiency
Automotive Auxiliary Power → Vibration resistant, good temperature tolerance, reliable power supply
Portable Device Power Management → Small package, high current, saves space
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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