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SQ2309CES-T1_GE3-VB Product details
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Still troubled by high power consumption and complex drive circuits in negative voltage power management? Let VBsemi SQ2309CES-T1_GE3-VB relieve you! This P-MOSFET in SOT23-3 package, though the size of a grain, can withstand -60V and -4.5A continuous current, with an on-resistance as low as 70mΩ @ 10V, significantly reducing power losses compared to similar devices. The Trench process delivers sharp switching characteristics and low gate charge, coupled with a ±20V wide gate voltage range, making positive voltage driving, level shifting, and load switching designs easy and reliable—a "negative voltage tool" for analog and power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -4.5A | 85(mΩ) | 70(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
Voltage Rating: -60V (Suitable for high-side negative voltage switching, ample margin)
Drive Range: ±20V (Compatible with 3.3V/5V/12V logic levels)
Turn-On Threshold: -1.7V (Low threshold, easy to drive directly)
Ultra-Low On-Resistance: 70mΩ @ 10V; 85mΩ @ 4.5V (Low conduction loss)
High Current Capability: -4.5A (Substantial power transfer in small packages)
Package: SOT23-3 (Suitable for high-density mounting and compact design)
Drive Range: ±20V (Compatible with 3.3V/5V/12V logic levels)
Turn-On Threshold: -1.7V (Low threshold, easy to drive directly)
Ultra-Low On-Resistance: 70mΩ @ 10V; 85mΩ @ 4.5V (Low conduction loss)
High Current Capability: -4.5A (Substantial power transfer in small packages)
Package: SOT23-3 (Suitable for high-density mounting and compact design)
Domain and module applications：
– Six Popular Scenarios, One Chip Handles It All
Load Switch: On/off control of power rails in portable devices, low voltage drop, fast response
Battery Protection: Reverse polarity protection and overcurrent cutoff, safeguarding cell safety
Power Management: Negative voltage conversion, DC-DC auxiliary switch, improving system efficiency
Signal Level Shifting: Bidirectional level matching, simplifying mixed-voltage system design
Motor Drive: Miniature fans, pump motors, P-MOS high-side drive is more concise
Automotive Auxiliary Circuits: Impact resistant, wide temperature range, providing solid support for vehicle system power supply SQ2309CES-T1_GE3-VB – Small package, big action in negative voltage, making your power design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
