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SQ2389CES-T1_GE3-VB Product details

Product introduction:

SQ2389CES-T1_GE3-VB is a Single P-MOSFET deeply optimized for low-voltage power switching scenarios. The Trench process balances low switching losses with high reliability, and the SOT23-3 package strikes a balance between heat dissipation and footprint area. The combination of 40V withstand voltage, 3.6A current capability, and 71mΩ on-resistance makes it an ideal cost-reduction and incremental upgrade option to replace traditional SOP-8 or SOT-89 packaged devices, especially suitable for high-density, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -40V -1.7V -3.6A 100(mΩ) 71(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P -40V -1.7V -3.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P -40V -1.7V -3.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P
(Key Decision Points for Selection)
VDS=-40V: Suitable for 12V/24V systems, providing sufficient margin for reverse voltage spikes and reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=-1.7V (typical): Ensures full conduction region even at low drive voltages, ideal for battery voltage decay scenarios.
RDS(on)=71mΩ @ VGS=10V: Low on-resistance significantly reduces full-load temperature rise, minimizing heat dissipation copper area.
RDS(on)=100mΩ @ VGS=4.5V: Maintains good conduction characteristics under low-voltage logic drive, adapting to multi-voltage rail drive requirements.
ID=-3.6A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, saving PCB area and assembly costs.

Domain and module applications:


Decision Value Analysis
Portable Device Power Management: Low resistance improves negative voltage conversion/load switch efficiency, extending battery life; small package aids ultra-thin design.
Battery Protection Module: Fast response characteristics ensure microsecond shutdown during over-current/short circuit, low resistance reduces self-heating of the protection board.
Low-Voltage Motor Drive: Low PWM switching losses, smoother motor operation, significantly reduced controller temperature rise.
Consumer Electronics Control Module: Logic level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Driver: Low conduction voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improving overall luminaire efficacy.
DC-DC Converter: Replaces traditional diodes in synchronous rectification or reverse polarity protection, improving heavy-load efficiency by 2~3%, facilitating module miniaturization.
Automotive Auxiliary Power Supply: Voltage margin and wide operating temperature range adapt to 12V automotive bus, high reliability. Selection Summary: The SQ2389CES-T1_GE3-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 40V low-voltage P-channel switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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