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SI2319DDS-T1-BE3-VB Product details
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SI2319DDS-T1-BE3-VB is a Single P-MOSFET deeply optimized for low-voltage power switching scenarios. The Trench process balances low switching losses with high reliability, and the SOT23-3 package strikes a balance between heat dissipation and footprint area. The combination of 40V withstand voltage, 3.6A current capability, and 71mΩ on-resistance makes it an ideal choice for high-density power management, battery protection, and load switch applications, especially suitable for high-volume designs sensitive to size and power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -40V | -1.7V | -3.6A | 100(mΩ) | 71(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -40V | -1.7V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -40V | -1.7V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
(Key Decision Points for Selection)
VDS=-40V: Suitable for 5V/12V/24V systems, provides ample margin for negative voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=-1.7V (Typical): Enters full conduction region even with low-voltage drive, suitable for P-MOS high-side switch applications under battery voltage decay scenarios.
RDS(on)=71mΩ @ VGS=10V: Low on-resistance, significantly reduces temperature rise under full load, can reduce heat sink copper area.
RDS(on)=100mΩ @ VGS=4.5V: Maintains good conduction characteristics under low gate voltage drive, facilitating direct control by low-voltage logic.
ID=-3.6A: Continuous current margin meets switching needs of most portable and automotive auxiliary loads.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, saves PCB area and assembly cost.
VDS=-40V: Suitable for 5V/12V/24V systems, provides ample margin for negative voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=-1.7V (Typical): Enters full conduction region even with low-voltage drive, suitable for P-MOS high-side switch applications under battery voltage decay scenarios.
RDS(on)=71mΩ @ VGS=10V: Low on-resistance, significantly reduces temperature rise under full load, can reduce heat sink copper area.
RDS(on)=100mΩ @ VGS=4.5V: Maintains good conduction characteristics under low gate voltage drive, facilitating direct control by low-voltage logic.
ID=-3.6A: Continuous current margin meets switching needs of most portable and automotive auxiliary loads.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, saves PCB area and assembly cost.
Domain and module applications：
Decision Value Analysis
Portable Device Power Management: P-MOS high-side switch simplifies load on/off control, low resistance improves system efficiency, extending battery life.
Battery Protection Module: Negative voltage withstand and fast switching characteristics ensure reliable shutdown during over-current/short circuit, low resistance reduces self-heating of the protection board.
Power Reverse Polarity Protection: Connected in series at the power input effectively prevents reverse polarity damage to downstream circuits, with low conduction voltage drop and low power consumption.
Load Switch/Power Path Management: Logic level direct drive simplifies peripherals, suitable for small-size applications like smart wearables and IoT devices.
Low-Voltage Motor Drive: Low PWM switching losses, smoother motor operation, significantly reduced controller temperature rise.
DC-DC Converter: Used for negative voltage buck or synchronous rectification auxiliary paths, improving light-load efficiency, facilitating module miniaturization.
Automotive Auxiliary Power Supply: Voltage margin and wide operating temperature range adapt to 12V automotive bus, high reliability. Selection Summary: The SI2319DDS-T1-BE3-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 40V P-MOS low-voltage switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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