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SQ2303CES-T1_GE3-VB Product details
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Still troubled by power consumption and board space in load switch and battery protection circuits? Let VBsemi SQ2303CES-T1_GE3-VB help! This SOT23-3 packaged P-MOS transistor, with its compact form, can withstand -5.6A continuous current and features a low on-resistance of 46mΩ (@10V), significantly reducing conduction losses. Trench technology gives it fast switching and low gate drive characteristics, and its -30V withstand voltage easily handles portable devices, battery management, and power conversion scenarios, making it a reliable "negative voltage switch tool" for engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
Voltage Rating: -30V (ample margin, suitable for multiple power rails)
Drive Range: ±20V (compatible with 3.3V/5V/12V drive signals)
Threshold Voltage: -1.7V (low-voltage logic can effectively control)
Ultra-Low On-Resistance: 46mΩ @10V, 54mΩ @4.5V (low conduction loss)
High Current Capability: -5.6A (small package delivers high energy)
Process Technology: Trench (low switching loss, fast response)
Package: SOT23-3 (suitable for high-density mounting and compact design)
Drive Range: ±20V (compatible with 3.3V/5V/12V drive signals)
Threshold Voltage: -1.7V (low-voltage logic can effectively control)
Ultra-Low On-Resistance: 46mΩ @10V, 54mΩ @4.5V (low conduction loss)
High Current Capability: -5.6A (small package delivers high energy)
Process Technology: Trench (low switching loss, fast response)
Package: SOT23-3 (suitable for high-density mounting and compact design)
Domain and module applications：
— Six Practical Scenarios, One Chip Covers All
Load Switch: Power path management for portable devices, low voltage drop, minimal heat generation
Battery Protection: Precise cutoff for over-discharge/overcurrent, safeguarding cell health
DC-DC Conversion: Synchronous rectification or reverse polarity protection, improving system efficiency
Power Path Management: Dual power supply switching, simple and reliable logic
Motor Drive: Small fans, pump motors, smooth speed control without impact
LED Lighting: Constant current/dimming control, enhanced stability
SQ2303CES-T1_GE3-VB — Compact package, major role in negative voltage, making your power design more efficient and worry-free!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
