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NDS356AP-NB8L005A-VB Product details
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Imagine: You are designing a compact lithium-powered device with extremely limited board space, yet you need to handle a load current of -5.6A. Traditional P-channel MOSFETs either have large packages or high conduction losses. VBsemi NDS356AP-NB8L005A-VB is designed for this—it packs -30V withstand voltage, -5.6A current capacity, and an on-resistance as low as 46mΩ into the miniature SOT23-3 package, making high-density power design easy.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
- Drain-Source Voltage -30V, meets safety margin for low-voltage systems
- Gate Drive Range ±20V, compatible with multiple logic level drives
- Threshold Voltage -1.7V, reliable turn-on with low-voltage control signals
- On-Resistance 46mΩ (10V drive) / 54mΩ (4.5V drive), lower loss
- Maximum Drain Current -5.6A, small package handles high current
- Advanced Trench process, excellent switching performance
- Gate Drive Range ±20V, compatible with multiple logic level drives
- Threshold Voltage -1.7V, reliable turn-on with low-voltage control signals
- On-Resistance 46mΩ (10V drive) / 54mΩ (4.5V drive), lower loss
- Maximum Drain Current -5.6A, small package handles high current
- Advanced Trench process, excellent switching performance
Domain and module applications：
- Battery Protection Board – As a load switch or protection switch, quickly cutting off over-discharge/overcurrent paths, safeguarding cell safety.
- Portable Device Power Management – Achieving low-loss power path management in power banks and TWS earphone charging cases, extending battery life.
- DC-DC Converter – Used for synchronous rectification or load switches, improving conversion efficiency and reducing heat generation with low on-resistance.
- Smart Wearable Devices – Utilizing the extremely small SOT23-3 package and low-voltage drive characteristics to simplify circuit layout and fit compact motherboards.
- Drones/Remote Control Cars – As a P-channel switch in the motor drive bridge arm, achieving efficient commutation and precise speed control.
- Industrial Sensor Interface – Withstanding -30V reverse voltage stress, providing stable power rail on/off control.
- LED Lighting Control – Low on-state voltage drop reduces power loss, suitable for battery-powered portable lights.
In a nutshell: NDS356AP-NB8L005A-VB is not an ordinary MOS tube; it is your 'P-channel switching tool' and 'power consumption control expert' in low-voltage, small-space, high-efficiency designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
