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SSM3J358R,LF-VB Product details
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Still bothered by high heat generation and space constraints in low-voltage load switches? VBsemi SSM3J358R,LF-VB is here to help! This SOT23-3 packaged P-MOSFET, compact in size yet capable of handling -5A continuous current, features an on-resistance as low as 34mΩ at 4.5V drive, delivering excellent switching loss and thermal performance. The Trench process ensures fast response and consistent reliability, with a -20V withstand voltage and ±12V gate drive range, easily covering various low-voltage portable and battery-powered scenarios—making it a "worry-free choice" for hardware engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.6V | -5A | 46(mΩ) | 34(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.6V | -5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.6V | -5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
- Voltage Rating: -20V (low-voltage applications, ample margin)
- Drive Range: ±12V (compatible with 2.5V/4.5V logic levels)
- Threshold Voltage: -0.6V (directly driven by low-voltage logic, simplifying peripherals)
- Ultra-Low On-Resistance: 46mΩ @ VGS=2.5V; 34mΩ @ VGS=4.5V (low conduction losses, effective heat reduction)
- High Current Capability: -5A (small package, high power)
- Package: SOT23-3 (high-density mounting, saves board space)
- Technology: Trench (low switching losses, fast response)
- Drive Range: ±12V (compatible with 2.5V/4.5V logic levels)
- Threshold Voltage: -0.6V (directly driven by low-voltage logic, simplifying peripherals)
- Ultra-Low On-Resistance: 46mΩ @ VGS=2.5V; 34mΩ @ VGS=4.5V (low conduction losses, effective heat reduction)
- High Current Capability: -5A (small package, high power)
- Package: SOT23-3 (high-density mounting, saves board space)
- Technology: Trench (low switching losses, fast response)
Domain and module applications：
- Battery protection: Precise management of discharge circuit, protects cell safety
- Power management: Low-dropout load switch, lower standby power consumption
- Portable devices: Power banks, TWS earphone cases, longer battery life
- Load switching: Fast signal/power path on/off, stable and reliable
- Peripheral drive: Buzzer, LED constant current control, simple and efficient
- Industrial sensing: Low-power sensor signal conditioning, adaptable to wide temperature environments. SSM3J358R,LF-VB — Small size, strong performance, making your low-voltage P-MOS design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
