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SSM3J355R,LF-VB Product details

Product introduction:

SSM3J355R,LF-VB is a compact, low on-resistance P-channel MOSFET in a SOT23-3 package, with -20V withstand voltage and -5A current capacity. Leveraging the Trench process, it achieves an on-resistance as low as 34mΩ at 4.5V drive, resulting in minimal heat generation and high efficiency. The gate drive is flexible, with a wide ±12V range, making it suitable for most low-voltage control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -20V -0.6V -5A 46(mΩ) 34(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P -20V -0.6V -5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P -20V -0.6V -5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P
Voltage Rating: -20V
Drive Voltage: ±12V
Threshold Voltage: -0.6V
On-Resistance (2.5V Drive): 46 mΩ
On-Resistance (4.5V Drive): 34 mΩ
Maximum Current: -5A
Package: SOT23-3

Domain and module applications:


Battery charge/discharge protection → Safe cutoff, extends battery life
Handheld device power supply → Load switch, clean on/off
Small fans, toy motors → Flexible speed regulation, fast response
Smart sockets, USB switches → Low loss, no heat generation
LED strip dimming → Uniform brightness, energy saving
DC-DC module → Synchronous rectification, better efficiency
Portable electronic products → Small package, saves board space
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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