中文
English
SSM3J321T(TE85L,F)-VB Product details
Back to previous pageProduct introduction：
Still troubled by the power consumption and package size of low-voltage load switches? VBsemi SSM3J321T(TE85L,F)-VB is here to help! This SOT23-3 packaged P-MOSFET, compact in size yet capable of handling -5A continuous current, features an ultra-low on-resistance of 34mΩ (@4.5V), delivering far superior thermal performance compared to similar competitors. The Trench process ensures faster switching speeds and lower losses, with a -20V withstand voltage and ±12V gate drive, easily covering common applications like portable devices, battery protection, and load switches—making it an "efficiency champion" for low-voltage system designs.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.6V | -5A | 46(mΩ) | 34(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.6V | -5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.6V | -5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
Voltage Rating: -20V (Adequate margin, safe and reliable)
Drive Range: ±12V (Compatible with 2.5V/4.5V logic drive)
Threshold Voltage: -0.6V (Easily turned on by low-voltage control signals)
Ultra-Low On-Resistance: 46mΩ @ 2.5V, 34mΩ @ 4.5V (Extremely low conduction loss)
High Current Capability: -5A (High energy in a small package)
Package: SOT23-3 (Suitable for high-density mounting, saves board area)
Drive Range: ±12V (Compatible with 2.5V/4.5V logic drive)
Threshold Voltage: -0.6V (Easily turned on by low-voltage control signals)
Ultra-Low On-Resistance: 46mΩ @ 2.5V, 34mΩ @ 4.5V (Extremely low conduction loss)
High Current Capability: -5A (High energy in a small package)
Package: SOT23-3 (Suitable for high-density mounting, saves board area)
Domain and module applications：
— Six Hot Scenarios, One Chip Covers All
Portable power: Power bank, TWS earphone case charge/discharge management, improved efficiency, lower temperature rise
Battery protection: Low-power standby, instant cutoff for over-discharge/overcurrent, protects cell safety
Load switch: Peripheral power switching, signal level shifting, responsive, minimal voltage drop
Micro motor drive: Fans, vibration motors, smooth speed regulation, lower noise
LED lighting: Strip lights, indicator constant current control, stable brightness, no flicker
DC-DC conversion: High-side switch for buck converters, aiding module miniaturization and efficiency. SSM3J321T — Small package, big performance, making your low-voltage P-MOS applications more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
