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SSM3J375F,LF-VB Product details
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SSM3J375F,LF-VB is a Single P-MOS deeply optimized for low-voltage power switching scenarios. The Trench technology balances low switching losses and high reliability, while the SOT23-3 package balances heat dissipation and board space. The combination of 20V withstand voltage, 3.5A current carrying capacity, and 71mΩ on-resistance makes it an ideal cost-reducing incremental option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -3.5A | 90(mΩ) | 71(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -3.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -3.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
**Product Parameters** (Key Selection Decision Points)
- **VDS=-20V**: Suitable for 3.3V/5V/8V low-voltage systems, providing ample voltage margin for negative power rails and load switch applications.
- **VGS=±12V**: Compatible with 1.8V~5V logic levels, can be driven directly by MCU/PMIC, simplifying peripheral circuitry.
- **Vth=-0.8V (Typical)**: Low threshold voltage ensures full conduction under low-voltage drive, suitable for battery voltage decay environments.
- **RDS(on)=90mΩ @ VGS=4.5V, 71mΩ @ VGS=10V**: Low on-resistance, controllable temperature rise under full load, reducing heat sink copper area.
- **ID=-3.5A**: Ample continuous current margin, meeting requirements for portable devices, auxiliary loads, and small motor drives.
- **Package SOT23-3**: Small size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly costs.
- **VDS=-20V**: Suitable for 3.3V/5V/8V low-voltage systems, providing ample voltage margin for negative power rails and load switch applications.
- **VGS=±12V**: Compatible with 1.8V~5V logic levels, can be driven directly by MCU/PMIC, simplifying peripheral circuitry.
- **Vth=-0.8V (Typical)**: Low threshold voltage ensures full conduction under low-voltage drive, suitable for battery voltage decay environments.
- **RDS(on)=90mΩ @ VGS=4.5V, 71mΩ @ VGS=10V**: Low on-resistance, controllable temperature rise under full load, reducing heat sink copper area.
- **ID=-3.5A**: Ample continuous current margin, meeting requirements for portable devices, auxiliary loads, and small motor drives.
- **Package SOT23-3**: Small size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly costs.
Domain and module applications：
**Application Fields and Modules** (Decision Value Analysis)
- **Portable Device Power Management**: Low on-resistance reduces voltage drop losses, extends battery life, and small package aids ultra-thin design.
- **Battery Protection Module**: P-MOS negative voltage drive characteristic adapts to battery-side high-side switches; low on-resistance reduces self-heating of the protection board.
- **Load Switch/Power Path Switching**: Direct logic-level drive, suitable for USB power delivery, peripheral power control, etc., achieving low standby power consumption.
- **Low-Voltage Motor Drive**: Low PWM switching loss, smooth motor operation, significantly lower controller temperature rise.
- **Consumer Electronics Control Module**: Simplifies drive circuits, suitable for high-volume, low-cost products like smart sockets, e-cigarettes, and small appliances.
- **DC-DC Converter**: Used for negative voltage rails or synchronous rectification auxiliary paths, improving conversion efficiency and facilitating module miniaturization.
- **Battery-Powered Systems**: -20V voltage rating and low threshold characteristics adapt to single/dual-cell lithium battery packs, reliable shutdown, low static power consumption.**Selection Summary**: SSM3J375F,LF-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 20V low-voltage P-MOS switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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