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SQ2301CES-T1_GE3-VB Product details
Back to previous pageProduct introduction：
SQ2301CES-T1_GE3-VB is a Single P-MOS deeply optimized for low-voltage power switching scenarios. The Trench technology balances low switching losses and high reliability, while the SOT23-3 package balances heat dissipation and board space. The combination of 20V withstand voltage, 3.5A current carrying capacity, and 71mΩ on-resistance makes it an ideal cost-reducing incremental option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -3.5A | 90(mΩ) | 71(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -3.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -20V | -0.8V | -3.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
VDS=-20V: Suitable for 5V/12V systems, providing sufficient voltage margin for negative voltage switching and load switching, reducing avalanche breakdown risk.
VGS=±12V: Compatible with 1.8V~8V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=-0.8V (Typical): Can enter full conduction region even under low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=71mΩ @ VGS=10V: Low on-resistance, significantly reduces full-load temperature rise, can reduce heat sink copper area.
ID=-3.5A: Sufficient continuous current margin, can handle peak demands of most portable and automotive auxiliary loads.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly cost.
VGS=±12V: Compatible with 1.8V~8V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=-0.8V (Typical): Can enter full conduction region even under low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=71mΩ @ VGS=10V: Low on-resistance, significantly reduces full-load temperature rise, can reduce heat sink copper area.
ID=-3.5A: Sufficient continuous current margin, can handle peak demands of most portable and automotive auxiliary loads.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly cost.
Domain and module applications：
Application Fields and Modules
Decision Value Analysis
Portable Device Power Management: Low on-resistance improves load switch efficiency, extends battery life, and small package aids ultra-thin design.
Battery Protection Module: Fast response ensures microsecond shutdown during overcurrent/short circuit; low on-resistance reduces self-heating of the protection board.
Low-Voltage Motor Drive: Low PWM switching loss results in smoother motor operation and significantly lower controller temperature rise.
Consumer Electronics Control Module: Direct logic-level drive simplifies peripheral circuitry, suitable for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Drive: Low conduction voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improving overall light efficiency.
DC-DC Converter: Replaces Schottky diodes in synchronous rectification, improving heavy-load efficiency and facilitating module miniaturization.
Automotive Auxiliary Power: Voltage margin and wide operating temperature range adapt to 12V automotive bus, offering high reliability. Selection Summary: SQ2301CES-T1_GE3-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 20V low-voltage P-MOS switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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