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SI2331DS-T1-GE3-VB Product details
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VBsemi SI2331DS-T1-GE3-VB is a Single P-channel field-effect transistor using Trench technology, designed for low-voltage load switching and efficient power management scenarios. Its SOT23-3 small package balances thermal performance and layout flexibility, suitable for space-constrained high-density PCB designs. The device provides stable switching characteristics within a -12V drain-source voltage range, with a wide gate drive voltage range of ±12V, compatible with common 2.5V/4.5V/10V logic levels, allowing direct drive by the system. The low on-resistance characteristic helps reduce conduction losses and improve overall conversion efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -12V | -0.8V | -6A | 40(mΩ) | 21(mΩ) | 18(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -12V | -0.8V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -12V | -0.8V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P |
**Product Parameters**
- Drain-Source Voltage (VDS): -12V
- Gate-Source Voltage (VGS): ±12V
- Threshold Voltage (Vth): -0.8V (typical)
- On-Resistance (VGS=2.5V): 40mΩ (typical)
- On-Resistance (VGS=4.5V): 21mΩ (typical)
- On-Resistance (VGS=10V): 18mΩ (typical)
- Maximum Drain Current (ID): -6A
- Package: SOT23-3
- Technology: Trench
- Drain-Source Voltage (VDS): -12V
- Gate-Source Voltage (VGS): ±12V
- Threshold Voltage (Vth): -0.8V (typical)
- On-Resistance (VGS=2.5V): 40mΩ (typical)
- On-Resistance (VGS=4.5V): 21mΩ (typical)
- On-Resistance (VGS=10V): 18mΩ (typical)
- Maximum Drain Current (ID): -6A
- Package: SOT23-3
- Technology: Trench
Domain and module applications：
**Field and Module Applications**
1. **Portable Device Power Management**: Used for load switches in power banks and handheld devices, utilizing low on-resistance to reduce voltage drop and extend battery life.
2. **Battery Protection Systems**: Serves as the main switch for the discharge circuit, working with protection ICs for fast overcurrent and overvoltage shutdown, ensuring cell safety.
3. **Low-Voltage Motor Drives**: Drives small DC brushless or brushed motors, suitable for fans, pumps, and toy actuators, supporting PWM speed control.
4. **Consumer Electronics Control Units**: Integrated into smart sockets and USB switching circuits for load access detection and power distribution.
5. **LED Lighting Constant Current Drive**: Used for low-voltage light strips or module drivers, providing stable output current and suppressing light flicker.
6. **DC-DC Converters**: Used for synchronous rectification or auxiliary switches, reducing rectification losses and suitable for Buck/Boost miniaturized designs.
7. **Vehicle Auxiliary Power**: Provides regulated power supply for auxiliary loads like infotainment and sensors in 12V vehicle networks.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
