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BSH111,235-VB Product details
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Still troubled by large leakage current and high drive requirements in small-signal switching applications? Let VBsemi BSH111,235-VB help! This SOT23-3 packaged N-MOSFET, compact in size, is designed for low-power, high-impedance signal switching. With a 60V withstand voltage and 0.3A drain current, it handles most low-voltage auxiliary circuits; the Trench process ensures stable switching characteristics, and the ±20V wide gate drive range allows easy direct drive by 3.3V/5V/12V logic. Ultra-low leakage current and controllable on-resistance make it reliable in precision measurement, interface protection, and other scenarios—a 'trouble-free little powerhouse' for engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Voltage Rating: 60V (Ample margin, suitable for wider voltage environments)
Drive Range: ±20V (Compatible with multiple logic levels, flexible driving)
Turn-On Threshold: 1.7V (Can be turned on with low-voltage signals, interface control friendly)
On-Resistance: 2800mΩ @ 10V / 3100mΩ @ 4.5V (Power consumption negligible in low-current applications)
Drain Current: 0.3A (Suitable for signal-level loads and auxiliary switch circuits)
Package: SOT23-3 (Minimal footprint, ideal for compact designs)
Drive Range: ±20V (Compatible with multiple logic levels, flexible driving)
Turn-On Threshold: 1.7V (Can be turned on with low-voltage signals, interface control friendly)
On-Resistance: 2800mΩ @ 10V / 3100mΩ @ 4.5V (Power consumption negligible in low-current applications)
Drain Current: 0.3A (Suitable for signal-level loads and auxiliary switch circuits)
Package: SOT23-3 (Minimal footprint, ideal for compact designs)
Domain and module applications：
– Six Typical Scenarios, One Easy Solution
Signal Switching: Analog switches, signal path control, low leakage without interference
Logic Level Shifting: Bidirectional level matching, simplifying mixed-voltage system design
Battery Monitoring and Protection: Minimal quiescent current, extending standby time
LED Indicator Drive: Microamp-level control, stable brightness without flicker
Sensor Interface: Low conduction loss, improving high-impedance signal acquisition accuracy
Auxiliary Power Management: Used for startup circuits, status detection, and other low-power branches. BSH111,235-VB – Small transistor, big wisdom, making your micro-power design more competitive!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
