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SI1K5N06UK-TP-VB Product details
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SI1K5N06UK-TP-VB is a Single N-MOSFET deeply optimized for high-voltage, low-current switching scenarios. The Trench process balances low switching loss and high reliability, while the SOT23-3 package strikes a balance between heat dissipation and footprint. The combination of 60V withstand voltage, 0.3A current-carrying capacity, and 2.8Ω on-resistance makes it an ideal replacement for traditional SOT-23 or SOT-89 packaged devices, especially suitable for high-density, low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
VDS=60V: Compatible with 12V/24V/48V systems, provides sufficient voltage spike margin, reduces avalanche breakdown risk.
VGS=±20V: Compatible with 3.3V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=1.7V (Typical): Enters conduction region at low drive voltage, suitable for battery voltage decay scenarios.
RDS(on)=2.8Ω @ VGS=10V: Balanced on-resistance in similar high-voltage low-current devices, controlled load temperature rise.
ID=0.3A: Continuous current capability matches signal switching, level shifting, and low-power drive requirements.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, saves PCB area and assembly cost.
VGS=±20V: Compatible with 3.3V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=1.7V (Typical): Enters conduction region at low drive voltage, suitable for battery voltage decay scenarios.
RDS(on)=2.8Ω @ VGS=10V: Balanced on-resistance in similar high-voltage low-current devices, controlled load temperature rise.
ID=0.3A: Continuous current capability matches signal switching, level shifting, and low-power drive requirements.
Package SOT23-3: Small size, low parasitic parameters, supports high-frequency switching, saves PCB area and assembly cost.
Domain and module applications：
Decision Value Analysis
Power Management Auxiliary Circuits: Used for startup circuits, under-voltage lockout, load switches, etc., low leakage current improves system stability.
Battery Protection Modules: High-voltage withstand margin ensures safe shutdown during overvoltage, small package suitable for compact protection boards.
Signal Level Shifting: Low-voltage logic drives high-side loads, good VGS compatibility, simplifies peripheral design.
Low-Power Motor Driving: Low PWM switching loss, suitable for micro motor applications like fans and vibration motors.
Consumer Electronics Control Modules: Logic level direct drive simplifies peripherals, suitable for mass-produced products like smart sockets and IoT devices.
LED Lighting Driving: Used in linear constant current or switching dimming auxiliary circuits, high withstand voltage improves reliability.
Industrial Sensor Interfaces: Wide operating voltage range adapts to 24V industrial bus, strong anti-transient interference capability. Selection Summary: SI1K5N06UK-TP-VB achieves a balance between withstand voltage capability, package size, and system cost, making it a cost-effective universal choice for 60V high-voltage low-current switching applications, especially suitable for projects with strict space and power consumption requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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