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NX5020UNBKR-VB Product details

Product introduction:

NX5020UNBKR-VB is a small-sized, low-power N-channel MOSFET in SOT23-3 package, with 60V withstand voltage and 0.3A current-carrying capacity. With Trench process, the on-resistance is stable at the 2.8Ω level, with low switching loss and high control precision. The gate drive is flexible with ±20V wide range, suitable for various low-voltage signal control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 1.7V 0.3A 3100(mΩ) 2800(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-N 60V 1.7V 0.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-N 60V 1.7V 0.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-N
Voltage: 60V
Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (10V Drive): 2800mΩ
Max Current: 0.3A
Package: SOT23-3
Technology: Trench

Domain and module applications:


Signal Level Shifting → Matching different voltage domains, reliable transmission
Small Current Load Switch → Clean on/off, low quiescent current
Battery Voltage Detection Circuit → Accurate sampling, no interference with main loop
LED Indicator Light Driving → Controllable current, stable brightness
Sensor Interface Protection → High withstand voltage, prevents accidental contact
DC-DC Auxiliary Circuit → High efficiency under light load, minimal loss
Portable Device Power Management → Small size, saving board space
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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