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DMN62D1L-7-VB Product details
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VBsemi DMN62D1L-7-VB is a Single N-channel field-effect transistor, part of the VBsemi brand product series. This product features high withstand voltage and low power consumption, suitable for various small-signal switching and control applications. Manufactured with Trench technology, it has a drain-source voltage (VDS) of 60V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in SOT23-3, suitable for circuit designs requiring high integration and compact layout.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Product Parameters:
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.7V
Gate-Source Resistance (VGS=4.5V): 3100 mΩ
Gate-Source Resistance (VGS=10V): 2800 mΩ
Maximum Drain Current (ID): 0.3A
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.7V
Gate-Source Resistance (VGS=4.5V): 3100 mΩ
Gate-Source Resistance (VGS=10V): 2800 mΩ
Maximum Drain Current (ID): 0.3A
Domain and module applications：
1. Signal Switching Circuits: DMN62D1L-7-VB is suitable for low-current signal switching, such as analog signal switches, sample-and-hold circuits, logic signal isolation, etc. Its high input impedance and low leakage current ensure signal integrity.
2. Level Shifting Modules: In mixed-voltage systems, this device can be used as a level-shifting switch, working with external resistors to achieve bidirectional or unidirectional conversion between logic levels like 3.3V and 5V, suitable for MCU peripheral interfaces.
3. Portable Device Load Switches: Due to its SOT23-3 small package and low power consumption, this MOSFET can be used for on/off control of low-power loads in portable electronic devices, such as power management for sensors, codecs, etc.
4. Battery Voltage Detection Circuits: In battery management systems, it can be used for switch control of battery voltage sampling channels, enabling sequential detection of multiple cells, reducing standby power consumption and improving detection accuracy.
5. Low-Power LED Drive: Suitable for switch control of low-current LED indicators, can be used as a common anode or common cathode driver tube, working with a current-limiting resistor for lighting or status indication functions.
6. Operational Amplifier Power Supply Switching: In single-supply op-amp circuits, it can be used as a switching element for negative or auxiliary power supplies, enabling power sequencing control or low-power standby mode.
7. Industrial Sensor Interface Modules: In industrial control systems, it is used for buffering and shaping sensor output signals, and can also serve as a pre-stage switch for low-power actuators (e.g., relay coil pre-drivers).
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
