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DMN53D5L-7-VB Product details
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VBsemi DMN53D5L-7-VB is a Single N-channel MOSFET belonging to the VBsemi product series. It features high withstand voltage and low power consumption, suitable for various signal control and low-power switching applications. Manufactured with Trench trench technology, it has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of ±20V. The product is packaged in SOT23-3, suitable for space-constrained compact circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Product Parameters:
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.7V
On-Resistance (VGS=4.5V): 3100mΩ
On-Resistance (VGS=10V): 2800mΩ
Maximum Drain Current (ID): 0.3A
Technology: Trench
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 1.7V
On-Resistance (VGS=4.5V): 3100mΩ
On-Resistance (VGS=10V): 2800mΩ
Maximum Drain Current (ID): 0.3A
Technology: Trench
Domain and module applications：
1. Signal Switching and Level Shifting: DMN53D5L-7-VB is suitable for on/off control of low-voltage control signals, such as MCU I/O port expansion and logic level conversion circuits, featuring low on-resistance and fast switching response.
2. Gate Drive Circuit: Can be used as an auxiliary switch for gate driving of power MOSFETs or IGBTs, for level shifting and driver stage control, suitable for low-current drive scenarios.
3. Low-Power Load Switch in Battery-Powered Devices: In low-power devices like smart bands, remote controls, and sensor nodes, used for controlling the on/off of peripheral power, with extremely low static power consumption.
4. Analog Switch and Sample-and-Hold Circuit: In test and measurement equipment, data acquisition systems, can serve as a small-signal analog switch, meeting high impedance and low leakage requirements.
5. DC-DC Auxiliary Power Supply and Startup Circuit: Used in startup circuits or auxiliary power branches of switching power supplies, utilizing its 60V voltage tolerance to withstand higher bus voltages.
6. LED Low-Power Drive Module: Suitable for constant current switch control in indicator lights and small LED drive circuits, simplifying system design and improving reliability.
7. Industrial Sensor Interface Module: In PLC, industrial control sensor output interfaces, used for signal isolation and low-current driving, suitable for integration with the small SOT23-3 package.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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