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DMN2025U-13-VB Product details
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Imagine designing a compact TWS earphone charging case, with internal space smaller than a capsule, yet requiring efficient 5V to 3.7V step-down conversion and battery charge/discharge management. Ordinary MOSFETs are either too large in package or have high conduction loss. VBsemi DMN2025U-13-VB is designed for exactly this—it integrates 20V drain-source voltage, 6A continuous drain current, and an ultra-low on-resistance of just 28mΩ into the ultra-small SOT23-3 package, making low-voltage portable device design more flexible and efficient.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | 42(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Drain-Source Voltage 20V, covers common low-voltage power rails
Gate Drive Range ±12V, compatible with 2.5V~4.5V logic drive
Threshold Voltage 0.5~1.5V, direct drive by low-voltage microcontroller without stress
On-Resistance 42mΩ (2.5V drive) / 28mΩ (4.5V drive), advantage becomes more significant at lower drive voltages
Maximum Current 6A, small package unleashes great potential
Uses Trench technology, excellent switching speed and loss performance
Gate Drive Range ±12V, compatible with 2.5V~4.5V logic drive
Threshold Voltage 0.5~1.5V, direct drive by low-voltage microcontroller without stress
On-Resistance 42mΩ (2.5V drive) / 28mΩ (4.5V drive), advantage becomes more significant at lower drive voltages
Maximum Current 6A, small package unleashes great potential
Uses Trench technology, excellent switching speed and loss performance
Domain and module applications：
Real-World Scenarios
TWS Earbud Charging Case – As a synchronous rectifier for boost/buck converters, significantly reducing loss and extending earbud battery life.
Smart Bracelet/Wearable Devices – Achieving precise overcurrent and over-discharge protection in battery protection circuits, safeguarding battery safety.
Portable E-cigarettes – Utilizing low on-resistance and fast switching characteristics to achieve stable power output and consistent flavor.
IoT Sensor Nodes – Used for battery power path management, microamp-level standby power consumption combined with efficient switching, enabling long battery life.
DC-DC Buck Module – Maintaining high efficiency under both light and heavy load conditions, replacing Schottky diodes can improve conversion efficiency by 2-3%.
Remote Control Toys/Small Appliances – Low on-resistance ensures high current drive capability, providing more powerful drive for motors and heating elements.
LED Flashlights/Ambient Lights – As a constant current switching tube, supporting precise dimming, no flicker, natural brightness transition. One Sentence Summary: DMN2025U-13-VB is not an ordinary low-voltage MOSFET; it is the "energy-saving pioneer" and "space optimizer" in your compact power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
