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SI500N025UK-TP-VB Product details
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Imagine: You are designing a compact smart wearable device with extremely limited battery compartment space, yet you need a switch transistor that can withstand a 6A peak current without frequent overheating. Ordinary MOS transistors either have intractable heat dissipation issues or are too large, crowding the layout. VBsemi SI500N025UK-TP-VB is born for this—it packs 20V withstand voltage, 6A current carrying capacity, and on-resistance as low as 28mΩ into the miniature size of SOT23-3, allowing low-voltage portable designs to easily achieve a win-win of high performance and miniaturization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | 42(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
- Voltage Rating 20V, suitable for low-voltage systems with ample safety margin
- Gate drive range ±12V, compatible with 2.5V~4.5V logic levels
- Threshold voltage 0.5~1.5V, reliable turn-on even with low-voltage platforms
- On-resistance 42mΩ (2.5V drive), 28mΩ (4.5V drive), excellent loss performance
- Maximum current 6A, small package delivers high power
- Trench process technology, stable and reliable switching performance
- Gate drive range ±12V, compatible with 2.5V~4.5V logic levels
- Threshold voltage 0.5~1.5V, reliable turn-on even with low-voltage platforms
- On-resistance 42mΩ (2.5V drive), 28mΩ (4.5V drive), excellent loss performance
- Maximum current 6A, small package delivers high power
- Trench process technology, stable and reliable switching performance
Domain and module applications：
- **Power Banks / Portable Chargers** – Used as load switches or battery path management, effectively reducing conduction losses and extending standby time.
- **Lithium Battery Protection Boards** – Quickly cuts off the circuit during overcurrent or short circuit, providing precise and timely protection for the cells.
- **TWS Earphone Charging Cases** – Small size perfectly matches compact PCBs, enabling low-power charge/discharge management.
- **Smart Locks / Sensor Nodes** – Stable on/off operation under low voltage drive, suitable for intermittent workloads.
- **E-Cigarettes / Small Appliances** – Utilizes low on-resistance and fast switching characteristics to improve control response and energy efficiency.
- **DC-DC Converter Modules** – In synchronous rectification or load switch applications, partially replaces Schottky diodes, improving conversion efficiency.
- **Portable Fans / Electric Toys** – Low on-resistance results in less temperature rise, allowing for sustained high-speed operation.**One-sentence summary**: SI500N025UK-TP-VB is not an ordinary MOSFET; it is the 'micro power heart' and 'efficiency gatekeeper' for your low-voltage, low-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
