中文
English
SI2300S-TP-VB Product details
Back to previous pageProduct introduction：
Imagine: You are designing a compact wearable device with a cramped battery compartment, yet you need to balance a 6A peak current with extremely low conduction loss. Ordinary MOS transistors either exceed the size limit or have high on-resistance. VBsemi SI2300S-TP-VB is born for this—it packs 20V withstand voltage, 6A current carrying capacity, and on-resistance as low as 28mΩ into the miniature size of SOT23-3, making low-voltage power design effortless.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | 42(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
**Product Parameters (Performance Data)**
- 20V Voltage Rating, suitable for low-voltage portable applications
- Gate Drive Range ±12V, compatible with 2.5V~4.5V logic levels
- Threshold Voltage 0.5~1.5V, supports low-voltage direct drive
- On-Resistance 42mΩ (2.5V drive) / 28mΩ (4.5V drive), significantly reduced losses
- Maximum Current 6A, excellent energy density in a small package
- Utilizes Trench technology for superior switching performance
- 20V Voltage Rating, suitable for low-voltage portable applications
- Gate Drive Range ±12V, compatible with 2.5V~4.5V logic levels
- Threshold Voltage 0.5~1.5V, supports low-voltage direct drive
- On-Resistance 42mΩ (2.5V drive) / 28mΩ (4.5V drive), significantly reduced losses
- Maximum Current 6A, excellent energy density in a small package
- Utilizes Trench technology for superior switching performance
Domain and module applications：
- **Power Banks / Charging Management** – Used as battery charge/discharge switches, low RDS(on) reduces heat generation and extends device battery life.
- **Battery Protection Boards** – Fast shutdown during overcurrent or short circuit, precisely protecting cell safety.
- **Smart Wearable Devices** – Miniaturized package fits compact PCBs, enabling efficient power switching.
- **E-Cigarettes / Small Appliances** – Stable load driving, fast response, supports continuous high-current operation.
- **DC-DC Converter Modules** – Replaces high-power dissipation components in synchronous rectification or load switches, improving conversion efficiency.
- **LED Driver Circuits** – Low-voltage constant current control, smooth dimming without flicker.
- **Portable Instruments** – Tolerates battery voltage fluctuations, providing a reliable power rail for the system.**One-sentence summary:** SI2300S-TP-VB is not just a small-package MOSFET; it is the 'compact power core' for your low-voltage, high-density power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
