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NTBLS4D0N15MC-VB Product details
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Still troubled by conduction loss and heat dissipation issues in high-power switching applications? Let VBsemi NTBLS4D0N15MC-VB solve your worries! This N-MOS transistor in TOLL package, using advanced SGT technology, can withstand 150V and 240A ultra-high current, with an on-resistance as low as 2.8mΩ (@10V), generating significantly less heat than similar devices. The SGT process brings extremely low switching loss and excellent avalanche tolerance, making it the 'efficiency champion' for high-voltage, high-current scenarios such as server power supplies, motor drives, and energy storage systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.3V | 240A | 2.8(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.3V | 240A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.3V | 240A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N |
Voltage Rating: 150V (Ample margin for high-voltage applications, safe and reliable)
Drive Range: ±20V (Compatible with 10V/12V logic drive)
Threshold Voltage: 3.3V (Moderate threshold, strong noise immunity)
Ultra-Low On-Resistance: 2.8mΩ @ 10V (Extremely low conduction losses, minimal thermal stress)
High Current Capability: 240A (Very high current handling, suitable for high power density designs)
Package: TOLL (High-current lead frame, low thermal resistance, suitable for surface mount)
Technology: SGT (Shielded Gate Trench technology, excellent switching performance and body diode recovery characteristics)
Drive Range: ±20V (Compatible with 10V/12V logic drive)
Threshold Voltage: 3.3V (Moderate threshold, strong noise immunity)
Ultra-Low On-Resistance: 2.8mΩ @ 10V (Extremely low conduction losses, minimal thermal stress)
High Current Capability: 240A (Very high current handling, suitable for high power density designs)
Package: TOLL (High-current lead frame, low thermal resistance, suitable for surface mount)
Technology: SGT (Shielded Gate Trench technology, excellent switching performance and body diode recovery characteristics)
Domain and module applications：
– Six High-Power Scenarios, One Chip Covers All
High-efficiency power supplies: Synchronous rectification for server/communication power supplies, significantly improving efficiency
Energy storage and inverters: Battery charge-discharge management, photovoltaic inverters, lower losses
Motor drives: Industrial motors, power tools, robot joints, fast speed regulation response
Automotive electronics: Automotive DC-DC, battery protection, impact-resistant, high-temperature resistant
Electric two-wheelers: Controller power stage, stable and reliable high-current output
Low-voltage high-current conversion: GaN chargers, PC power supplies, aiding miniaturization design. NTBLS4D0N15MC-VB – Large package, large energy, making your power design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
