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NCE90N800T-VB Product details
Back to previous pageProduct introduction：
NCE90N800T-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. Its SJ_Multi-EPI technology balances low conduction losses with high-voltage reliability, while the TO247 package achieves a balance between heat dissipation and ease of installation. The combination of 900V withstand voltage, 9A current capability, and 750mΩ on-resistance makes it an ideal alternative to traditional high-voltage planar MOSFETs, particularly suitable for applications with stringent voltage and reliability requirements such as industrial power supplies, photovoltaic inverters, and high-voltage auxiliary power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
VDS=900V: Suitable for three-phase high-voltage rectification, photovoltaic boost, and industrial bus systems, provides ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±30V: Compatible with standard gate drive circuits, supports a wide drive voltage range, simplifying drive design.
Vth=3.5V (typical): Moderate threshold voltage, strong noise immunity, suitable for high-voltage hard-switching topologies, preventing false turn-on.
RDS(on)=750mΩ @ VGS=10V: On-resistance optimized based on SJ_Multi-EPI technology, maintains low loss at high voltage, reducing full-load temperature rise.
ID=9A: Ample continuous current capability, can handle peak demands in most high-voltage switching power supplies and motor drive scenarios.
Package TO247: Large creepage distance, low thermal resistance, suitable for high-voltage, high-power-density designs, easy to mount heatsinks, improving long-term system reliability.
VGS=±30V: Compatible with standard gate drive circuits, supports a wide drive voltage range, simplifying drive design.
Vth=3.5V (typical): Moderate threshold voltage, strong noise immunity, suitable for high-voltage hard-switching topologies, preventing false turn-on.
RDS(on)=750mΩ @ VGS=10V: On-resistance optimized based on SJ_Multi-EPI technology, maintains low loss at high voltage, reducing full-load temperature rise.
ID=9A: Ample continuous current capability, can handle peak demands in most high-voltage switching power supplies and motor drive scenarios.
Package TO247: Large creepage distance, low thermal resistance, suitable for high-voltage, high-power-density designs, easy to mount heatsinks, improving long-term system reliability.
Domain and module applications：
Decision Value Analysis
High-Voltage Switching Power Supply: Low conduction loss and high withstand voltage synergistically improve efficiency, adapting to a wide input voltage range, suitable for industrial power supplies and communication power modules.
Photovoltaic Inverter: SJ_Multi-EPI technology provides excellent switching characteristics, reducing high-voltage spikes and improving MPPT cascade efficiency.
Electric Vehicle Charging Pile Auxiliary Power Supply: 900V withstand voltage covers high-voltage bus requirements, TO247 package facilitates thermal management, high reliability.
Uninterruptible Power Supply (UPS): High withstand voltage margin ensures stable operation during grid fluctuations, low loss reduces cooling system cost.
High-Voltage DC-DC Converter: Replaces traditional high-voltage MOS, improves heavy-load efficiency, beneficial for module miniaturization and power density upgrade.
Motor Drive and Frequency Converter: Built-in fast recovery characteristics cooperate with PWM control, reducing switching losses and improving inverter bridge reliability.
Selection Summary: The NCE90N800T-VB achieves an optimized balance between withstand voltage capability, conduction loss, and package thermal performance. It is a high-reliability general-purpose choice for 900V high-voltage switching applications, especially suitable for projects with strict requirements for system stability and thermal design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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