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CS9N90AKRD-G-VB Product details

Product introduction:

CS9N90AKRD-G-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios, employing SJ_Multi-EPI superjunction technology to achieve an excellent balance between on-resistance and switching speed. The TO247 package offers superior heat dissipation and high-voltage creepage distance, making it suitable for industrial-grade, high-reliability applications. The combination of 900V withstand voltage, 9A current capability, and 750mΩ on-resistance makes it an ideal choice for high-voltage systems such as server power supplies, charging stations, and photovoltaic inverters.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 900V 3.5V 9A 750(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
VDS=900V: Covers 380V three-phase systems and high-voltage bus applications, provides ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive window, compatible with various PWM controllers and driver ICs, simplifying gate drive circuit design.
Vth=3.5V (typical): Moderate threshold voltage, strong noise immunity, ensures reliable turn-on at high voltage.
RDS(on)=750mΩ @ VGS=10V: Super Junction technology achieves low on-resistance, keeping conduction loss manageable in high-voltage, high-current scenarios, reducing thermal stress.
ID=9A: Ample continuous current capability, suitable for main switch applications in medium-power switching power supplies and inverters.
Package TO247: Through-hole mounting offers a short thermal path and low thermal resistance, ideal for prolonged full-load operation, and facilitates PCB layout and heatsink attachment.
Technology SJ_Multi-EPI: Multi-layer epitaxial Super Junction structure, optimizes charge balance, improves the figure of merit between breakdown voltage and on-resistance, resulting in lower switching losses.

Domain and module applications:


Decision Value Analysis
Switching Power Supply (SMPS): High-voltage MOS operates stably in flyback, half-bridge/full-bridge topologies, with low switching losses improving overall efficiency.
Photovoltaic Inverter: 900V withstand voltage adapts to photovoltaic DC bus voltage, SJ_Multi-EPI technology reduces conduction losses, improving grid-connected conversion efficiency.
Charging Pile and On-Board Charger (OBC): TO247 package offers significant heat dissipation advantages in high-voltage, high-power scenarios, ensuring long-term reliability.
Industrial Motor Drive: Built-in super-junction structure provides strong surge resistance, suitable for three-phase 380V industrial motor variable frequency control.
UPS Uninterruptible Power Supply: High withstand voltage margin handles battery buck-boost transient shocks, ensuring continuous power supply to critical loads.
High-Voltage DC-DC Converter: Can replace traditional planar MOS in synchronous rectification or PFC stages, improving heavy-load efficiency and reducing system size.
Selection Summary: The CS9N90AKRD-G-VB achieves a balanced optimization between high-voltage withstand, conduction loss, package heat dissipation, and system reliability. It is a cost-effective general-purpose choice for 900V high-voltage switching applications, especially suitable for industrial power supplies and new energy projects with strict requirements for withstand voltage margin and thermal dissipation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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