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SiHW21N80AE-VB Product details
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Imagine this: You are designing a high-power industrial power supply or photovoltaic inverter with a bus voltage of up to 800V, requiring a stable 20A output current. Ordinary high-voltage MOSFETs either have excessive conduction losses or require complex drive circuits. The VBsemi SiHW21N80AE-VB is designed for this—it packs 800V withstand voltage, 20A current capacity, and an on-resistance of only 220mΩ into the robust TO247 package, allowing high-voltage, high-power designs without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating 800V, handles high-voltage applications with ease
Gate Drive Range ±30V, compatible with multiple drive schemes
Threshold Voltage 3.5V, reliably turns on with standard levels
On-Resistance 220mΩ (at 10V drive), remains efficient at high voltage
Maximum Current 20A, TO247 package offers better heat dissipation
Technology Type SJ_Multi-EPI (Super Junction Multi-Epitaxy process), balancing low loss and high reliability
Gate Drive Range ±30V, compatible with multiple drive schemes
Threshold Voltage 3.5V, reliably turns on with standard levels
On-Resistance 220mΩ (at 10V drive), remains efficient at high voltage
Maximum Current 20A, TO247 package offers better heat dissipation
Technology Type SJ_Multi-EPI (Super Junction Multi-Epitaxy process), balancing low loss and high reliability
Domain and module applications：
Application Fields and Modules Real-World Scenarios
Photovoltaic Inverters – Used as boost or inverter stage switches, achieving low-loss switching in high-voltage buses to improve system efficiency.
Industrial Switching Power Supplies / Communication Power Supplies – Used as PFC or DC-DC main switches, withstanding high-voltage surges to ensure long-term stable operation.
Electric Vehicle Charging Stations – Plays a critical switching role in high-voltage power conversion modules, enabling high-power fast charging.
Uninterruptible Power Supplies (UPS) – Utilizes 800V voltage withstand and low on-resistance to optimize return losses during mains-to-battery switching.
High-Voltage Motor Drives – Tolerates bus voltage fluctuations, providing smooth power output and reducing motor noise.
Active Power Filters / SVG Reactive Power Compensation – Fast switching characteristics combined with high surge capability enhance power quality management.
One-sentence summary: The SiHW21N80AE-VB is not just an ordinary high-voltage MOSFET; it is the "power foundation" and "efficiency guardian" of your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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