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IPW80R280P7-VB Product details
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Imagine this: You are designing a high-power-density high-voltage power system, such as a server PFC circuit or an industrial variable frequency drive. It needs to withstand bus voltages up to 800V and maintain extremely low losses at 20A current. Ordinary high-voltage MOSFETs either have high switching losses or high conduction voltage drops, making thermal design challenging. The VBsemi IPW80R280P7-VB is designed for this—based on advanced SJ_Multi-EPI superjunction technology, it integrates 800V withstand voltage, 20A current capacity, and an ultra-low on-resistance of only 220mΩ in a standard TO247 package, making high-voltage, high-power design efficient and effortless.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Voltage Rating 800V, easily handles high-voltage bus fluctuations and spikes
- Gate Drive Range ±30V, compatible with various drive circuits
- Threshold Voltage 3.5V, suitable for standard MOS drive levels
- On-Resistance 220mΩ (at 10V drive), excellent level in high-voltage devices
- Maximum Current 20A, meets medium to high power application needs
- Super Junction Multi-Epitaxy process, achieving a balance between low conduction loss and fast switching
- Gate Drive Range ±30V, compatible with various drive circuits
- Threshold Voltage 3.5V, suitable for standard MOS drive levels
- On-Resistance 220mΩ (at 10V drive), excellent level in high-voltage devices
- Maximum Current 20A, meets medium to high power application needs
- Super Junction Multi-Epitaxy process, achieving a balance between low conduction loss and fast switching
Domain and module applications：
Application Fields and Modules Real-World Scenarios
- Switching Power Supplies / PFC Power Factor Correction – Used as the main switch tube, effectively reducing conduction losses under high voltage, improving overall system efficiency.
- Server / Communication Power Supplies – Withstands 800V high-voltage input, provides stable output, and alleviates thermal stress.
- Industrial Frequency Converters / Motor Drives – High reliability and robustness, adaptable to harsh grid environments.
- Photovoltaic Inverters – Used in DC-DC boost or inverter bridge arms, facilitating efficient conversion in new energy systems.
- Electric Vehicle Charging Station Modules – Leverages low on-resistance and high voltage capability to reduce power waste during charging.
- High-Voltage Auxiliary Power Supplies / Flyback Converters – Maintains stable performance over a wide input voltage range, simplifying snubber circuit design. One-sentence summary: The IPW80R280P7-VB is not just an ordinary high-voltage MOSFET; it is the "high-voltage efficiency expert" and "reliable cornerstone" in your high-power-density design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
