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SiHG11N80AEF-VB Product details
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The SiHG11N80AEF-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. Using SJ_Multi-EPI superjunction technology, it achieves a balance of low on-resistance and low gate charge at an 800V voltage rating. The TO247 package offers excellent heat dissipation and creepage distance, suitable for applications with high reliability requirements such as industrial power supplies, inverters, and high-voltage auxiliary circuits. The combination of 11A continuous current and 500mΩ on-resistance makes it a cost-effective solution that balances efficiency and cost in high-voltage, high-frequency hard-switching topologies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **VDS=800V**: Covers three-phase rectification, PFC boost, and industrial bus systems, providing sufficient voltage spike margin, significantly reducing avalanche breakdown risk.
- **VGS=±30V**: Wide gate drive withstand voltage window, compatible with 12V~24V drive levels, simplifying drive circuit design and enhancing noise immunity.
- **Vth=3.5V (Typical)**: Moderate threshold voltage, effectively suppressing false turn-on, while ensuring stable and controllable gate drive under high voltage.
- **RDS(on)=500mΩ @ VGS=10V**: Optimized on-resistance based on super junction multi-epitaxy process, lower losses under high voltage and high current, reducing heatsink size.
- **ID=11A**: Ample continuous current margin in TO247 package, capable of handling peak surges from inductive loads like motors and transformers.
- **Package TO247**: Through-hole mounting, low thermal resistance, suitable for high power density layout, supports long pin or bent lead forms for industrial PCB assembly needs.
- **Technology SJ_Multi-EPI**: Charge balance structure reduces on-resistance and switching losses, improves avalanche capability, outperforming traditional planar high-voltage MOSFETs.
- **VGS=±30V**: Wide gate drive withstand voltage window, compatible with 12V~24V drive levels, simplifying drive circuit design and enhancing noise immunity.
- **Vth=3.5V (Typical)**: Moderate threshold voltage, effectively suppressing false turn-on, while ensuring stable and controllable gate drive under high voltage.
- **RDS(on)=500mΩ @ VGS=10V**: Optimized on-resistance based on super junction multi-epitaxy process, lower losses under high voltage and high current, reducing heatsink size.
- **ID=11A**: Ample continuous current margin in TO247 package, capable of handling peak surges from inductive loads like motors and transformers.
- **Package TO247**: Through-hole mounting, low thermal resistance, suitable for high power density layout, supports long pin or bent lead forms for industrial PCB assembly needs.
- **Technology SJ_Multi-EPI**: Charge balance structure reduces on-resistance and switching losses, improves avalanche capability, outperforming traditional planar high-voltage MOSFETs.
Domain and module applications：
**Application Fields and Modules**
Decision Value Analysis- **Switching Power Supplies and PFC Circuits**: 800V voltage withstand combined with low on-resistance makes it suitable for Boost stages and main switch tubes in 220V~480V wide-input voltage applications, improving overall system efficiency.
- **Industrial Inverters and Motor Drives**: Sufficient high-voltage bus drive capability, clean PWM switching waveforms, effectively reducing motor winding temperature rise and controller stress.
- **Photovoltaic Inverters and Energy Storage Systems**: Suitable for high-input-voltage DC-DC and DC-AC topologies, supporting MPPT charge/discharge control and grid-tied conversion with high reliability.
- **Electric Vehicle Chargers and Auxiliary Power Supplies**: Wide voltage withstand range handles battery back-EMF surges; TO247 package facilitates heat sink design, suitable for on-board and charging station scenarios.
- **High-Voltage Battery Management Systems (BMS)**: Used as charge/discharge path switches, low conduction losses reduce high-current temperature rise, fast turn-off characteristics enhance fault protection capability.
- **Medical and Industrial Equipment Power Supplies**: Meets high isolation voltage and long-term operation requirements, supports high-frequency hard-switching and soft-switching topologies, improving system MTBF.
- **Power Meters and Relay Protection**: In high-side switch control and load switching, strong surge immunity makes it suitable for harsh environments with continuous live operation.**Selection Summary**
The SiHG11N80AEF-VB achieves a balance between high voltage withstand, conduction loss, package heat dissipation, and process reliability, making it an efficient and robust general-purpose power device choice for the 800V voltage class, especially suitable for industrial and energy projects with strict requirements on device stress, thermal management, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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