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SiHG11N80AE-VB Product details
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Imagine this: You are designing a high-efficiency industrial switching power supply with an input bus voltage of up to 800V, yet you need to balance low loss with high reliability. Ordinary MOSFETs either lack sufficient voltage tolerance or have high on-resistance, leading to bulky heatsinks. The VBsemi SiHG11N80AE-VB is designed for this—it integrates 800V withstand voltage, 11A continuous current capability, and 500mΩ on-resistance in a TO247 package, allowing high-voltage, high-power designs without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating 800V, easily handles high-voltage bus fluctuations
Gate Drive Range ±30V, compatible with various drive circuits
Threshold Voltage 3.5V, clear and reliable switching characteristics
On-Resistance 500mΩ (at 10V drive), lower losses under high voltage
Maximum Current 11A, TO247 package with excellent heat dissipation, suitable for continuous high power output
Technology SJ_Multi-EPI, reduces on-resistance and switching losses, improving system efficiency
Gate Drive Range ±30V, compatible with various drive circuits
Threshold Voltage 3.5V, clear and reliable switching characteristics
On-Resistance 500mΩ (at 10V drive), lower losses under high voltage
Maximum Current 11A, TO247 package with excellent heat dissipation, suitable for continuous high power output
Technology SJ_Multi-EPI, reduces on-resistance and switching losses, improving system efficiency
Domain and module applications：
Application Fields and Modules Real-World Scenarios
Industrial Switching Power Supplies – Used as a high-voltage main switch tube, significantly reducing conduction losses and improving overall power supply efficiency.
PFC Power Factor Correction Modules – Utilizes low on-resistance and fast switching capability to improve harmonic current, meeting high-power-density design requirements.
Photovoltaic Inverters – Used in the DC-AC conversion stage, withstanding high-voltage bus stress to ensure long-term stable operation.
High-Voltage DC-DC Converters – Handles power switching in 800V input systems, reducing losses and simplifying thermal design.
Motor Drives/Frequency Converters – Suitable for three-phase industrial motor drives, with ample voltage withstand margin and strong surge immunity.
Charging Station Auxiliary Power Supplies – Operates reliably in high-voltage input environments, providing stable power support for control systems.
Uninterruptible Power Supplies (UPS) – Serves as a key device in the inverter stage, enhancing overload capability and system reliability. One-sentence summary: The SiHG11N80AE-VB is not just an ordinary MOSFET; it is the "reliability cornerstone" and "efficiency engine" of your high-voltage power supply system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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