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NCE80NF140F-VB Product details
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Still struggling with conduction losses and heat dissipation issues in high-voltage, high-current applications? Let VBsemi NCE80NF140F-VB solve your worries! This TO220F packaged Single N-Channel Super Junction MOSFET features a voltage withstand of up to 800V, can carry 25A continuous current, and has an on-resistance of only 138mΩ (@10V), significantly reducing conduction losses. Manufactured using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, it offers excellent switching characteristics, low losses, and high reliability, making it the 'efficiency champion' for high-voltage power supplies and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 25A | 138(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 25A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 800V (Sufficient margin, suitable for high-voltage systems)
Drive Range: ±30V (Compatible with various gate drive solutions)
Turn-On Threshold: 3.5V (Standard logic level can drive stably)
On-Resistance: 138mΩ @ 10V (Low conduction loss, minimal heat generation)
High Current Capability: 25A (Better heat dissipation with TO220F package)
Package: TO220F (Fully molded, easy to install, suitable for high-voltage isolation scenarios)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxy, optimized conduction and switching performance)
Drive Range: ±30V (Compatible with various gate drive solutions)
Turn-On Threshold: 3.5V (Standard logic level can drive stably)
On-Resistance: 138mΩ @ 10V (Low conduction loss, minimal heat generation)
High Current Capability: 25A (Better heat dissipation with TO220F package)
Package: TO220F (Fully molded, easy to install, suitable for high-voltage isolation scenarios)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxy, optimized conduction and switching performance)
Domain and module applications：
Switching Power Supply: Efficient AC-DC main switch, reduces losses, improves conversion efficiency
PFC Power Factor Correction: High-frequency stable switching, helps power modules meet energy efficiency standards
Inverters and UPS: Reliable handling of high-voltage DC bus, ensures uninterrupted power supply
Motor Drive: Industrial motors, pumps, fan control, smooth speed regulation, strong impact resistance
Photovoltaic Energy Storage: MPPT and charge/discharge control, withstands high-voltage stress, system more reliable
High-Voltage DC-DC Conversion: Electric vehicle auxiliary power, communication base station power supply, stable and efficient NCE80NF140F-VB – High voltage, high current, low resistance, high efficiency, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
