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CRJF450N80G2-VB Product details
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Imagine this: You are designing a highly reliable industrial power supply or photovoltaic inverter, facing a bus voltage of up to 800V, while still needing to balance efficiency and heat dissipation. Ordinary high-voltage MOSFETs either have high conduction loss or complex drive circuits. The VBsemi CRJF450N80G2-VB is designed for this—it uses SJ_Multi-EPI super-junction technology to integrate 800V withstand voltage, 11A current capacity, and 480mΩ on-resistance into a TO220F fully isolated package, making high-voltage switching design both safe and efficient.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | 480(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Product Parameters (Key Data)
Voltage Rating 800V, easily handles high-voltage bus surges
Gate Drive Range ±30V, compatible with various gate drive circuits
Threshold Voltage 3.5V, reliable turn-on at standard levels
On-Resistance 480mΩ (at 10V drive), lower loss at high voltage
Maximum Current 11A, stable high-power output
Fully isolated TO220F package, no additional insulation pad needed, easier installation
SJ_Multi-EPI superjunction technology, optimized switching speed and conduction characteristics
Voltage Rating 800V, easily handles high-voltage bus surges
Gate Drive Range ±30V, compatible with various gate drive circuits
Threshold Voltage 3.5V, reliable turn-on at standard levels
On-Resistance 480mΩ (at 10V drive), lower loss at high voltage
Maximum Current 11A, stable high-power output
Fully isolated TO220F package, no additional insulation pad needed, easier installation
SJ_Multi-EPI superjunction technology, optimized switching speed and conduction characteristics
Domain and module applications：
Real-World Scenarios
Photovoltaic Inverters / Energy Storage Converters – Used as high-voltage DC-DC or inverter stage switches, effectively reducing conduction losses and improving system conversion efficiency.
Industrial Switching Power Supplies – Used as the main switch in flyback or forward topologies, withstanding wide voltage fluctuations to ensure long-term stable operation.
Electric Vehicle Charging Station Auxiliary Power Supplies – Leveraging high-voltage withstand and low on-resistance characteristics to provide reliable power conversion for control boards.
Motor Drives / Industrial Inverters – Achieving efficient power switching in the high-voltage bus after 380V three-phase input rectification.
Uninterruptible Power Supplies (UPS) – Withstanding high-voltage surges in battery boost or mains bypass switching circuits, ensuring critical loads remain powered.
High-Voltage DC-DC Converters – Suitable for scenarios requiring wide input voltage ranges, such as communication base stations and server power supplies. One-sentence summary: The CRJF450N80G2-VB is not an ordinary MOS tube; it is the 'voltage withstand rock' and 'efficiency engine' for your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
