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SiHA11N80E-VB Product details
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SiHA11N80E-VB is a Single N-MOS carefully designed for high-voltage power switching scenarios. Using SJ_Multi-EPI super-junction technology, it achieves an excellent balance between on-resistance and switching speed. The TO220F fully insulated package offers good insulation and heat dissipation capabilities, suitable for medium-to-high-power system designs. The combination of 800V withstand voltage, 11A current capacity, and 480mΩ on-resistance makes it a cost-effective option for high-voltage applications such as industrial power supplies, photovoltaic inverters, and charging station auxiliary power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | 480(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
(Selection Decision Points)
VDS=800V: Covers high-voltage bus scenarios such as three-phase rectification, photovoltaic boost, and industrial buses, providing sufficient voltage withstand margin and reducing transient overvoltage failure risk.
VGS=±30V: Wide gate drive tolerance range, compatible with common high-voltage driver ICs and PWM controller outputs, simplifying gate protection circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, ensuring stable and controllable drive conditions in high-voltage applications.
RDS(on)=480mΩ @ VGS=10V: Superjunction structure significantly reduces conduction loss in high-voltage devices, controlling temperature rise under full load and improving overall system efficiency.
ID=11A: Robust continuous current capability in the TO220F package, meeting steady-state and peak current requirements of most medium-power high-voltage loads.
Package TO220F: Fully molded isolation design eliminates the need for additional insulation pads, easy to install, low thermal resistance, suitable for industrial-grade heat sink mounting solutions.
VDS=800V: Covers high-voltage bus scenarios such as three-phase rectification, photovoltaic boost, and industrial buses, providing sufficient voltage withstand margin and reducing transient overvoltage failure risk.
VGS=±30V: Wide gate drive tolerance range, compatible with common high-voltage driver ICs and PWM controller outputs, simplifying gate protection circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, ensuring stable and controllable drive conditions in high-voltage applications.
RDS(on)=480mΩ @ VGS=10V: Superjunction structure significantly reduces conduction loss in high-voltage devices, controlling temperature rise under full load and improving overall system efficiency.
ID=11A: Robust continuous current capability in the TO220F package, meeting steady-state and peak current requirements of most medium-power high-voltage loads.
Package TO220F: Fully molded isolation design eliminates the need for additional insulation pads, easy to install, low thermal resistance, suitable for industrial-grade heat sink mounting solutions.
Domain and module applications：
Decision Value Analysis
Industrial Switching Power Supplies: Low loss and high reliability under high-voltage bus input, suitable for switching tube applications in flyback, dual-transistor forward, and LLC topologies.
Photovoltaic Inverter Auxiliary Power Supply: Sufficient voltage margin to handle PV panel open-circuit voltage and lightning surges, improving long-term system stability.
Electric Vehicle Charger High-Voltage Stage: Performs robustly in PFC and DC-DC conversion stages, reducing switching losses and improving overall temperature rise.
UPS Uninterruptible Power Supply: Provides reliable switching performance in high-voltage bus switching and inverter bridge arms, enhancing system overload and short-circuit withstand capability.
Motor Drive Auxiliary Power Supply: Built-in super-junction technology reduces high-voltage side losses, suitable for switching power supply sections of industrial inverters and servo drives.
High-Voltage Battery Management System: Provides high-voltage isolated power for battery balancing and monitoring units, ensuring stable output under wide voltage input. Selection Summary: The SiHA11N80E-VB achieves a balance between high-voltage withstand, conduction loss, and package convenience, making it a versatile power switch solution balancing performance and cost for the 800V voltage class, especially suitable for industrial applications with strict reliability and thermal management requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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