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CRJF600N80G2E-VB Product details

Product introduction:

Imagine this: You are designing a high-power-density switching power supply that needs to withstand an 800V bus voltage, yet you want to control losses and temperature rise. Ordinary high-voltage MOSFETs either have high on-resistance or cause switching stress headaches. The VBsemi CRJF600N80G2E-VB is designed for this—it integrates 800V withstand voltage, 9A current capacity, and 540mΩ on-resistance into a fully insulated TO220F package, making high-voltage power supply design both safe and efficient, without compromising between 'high withstand voltage' and 'low loss'.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 800V 3.5V 9A 540(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 800V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 800V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Product Parameters (Key Data)
- Voltage Rating 800V, covering high-voltage scenarios like three-phase rectification and PFC
- Gate Drive Range ±30V, compatible with various driver ICs, strong gate overvoltage immunity
- Threshold Voltage 3.5V, clear switching characteristics, ample noise margin
- On-Resistance 540mΩ (at 10V drive), excellent performance in the 800V voltage class
- Maximum Current 9A, paired with TO220F package for reliable heat dissipation and easy installation
- Utilizes SJ_Multi-EPI superjunction multi-epitaxial technology, reducing conduction loss and improving switching speed

Domain and module applications:


Real-World Scenarios
- Switching Power Supplies / Adapters – Used as the main high-voltage switching transistor, leveraging super-junction technology to reduce conduction losses and improve overall efficiency.
- PFC Power Factor Correction – Withstands 800V high voltage in boost topology, achieving low EMI and stable power factor.
- Electric Vehicle Chargers – Tolerates wide input voltage fluctuations, providing a robust power stage foundation for high-reliability charging solutions.
- Photovoltaic Inverters / Energy Storage Systems – Utilizing low on-resistance and fast switching characteristics to reduce inverter losses and increase power generation revenue.
- Industrial Auxiliary Power Supplies – Used in high-voltage DC-DC converters to provide stable, isolated power rails for control circuits.
- Induction Heating / Induction Cookers – Maintains low losses under high-frequency switching, suitable for medium-power resonant converters.
- Motor Drives / Industrial Control – Serves as a high-voltage startup or clamp switch, improving system overvoltage capability. One-sentence summary: The CRJF600N80G2E-VB is not an ordinary high-voltage MOS tube; it is the 'super-junction weapon' and 'efficiency champion' for your 800V system design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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