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STF80N600K6-VB Product details
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Still troubled by complex designs and high losses in high-voltage switching power supplies? VBsemi STF80N600K6-VB is here to help! This TO220F packaged N-MOSFET is designed for high-voltage, high-efficiency applications. With a perfect balance of 800V voltage tolerance and ultra-low conduction losses, combined with SJ_Multi-EPI superjunction technology, it enables low heat generation and high reliability in high-voltage systems. Whether in industrial power supplies or new energy equipment, it serves as a 'solid backbone' for your power stage design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 800V (Sufficient margin for high-voltage systems)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 770mΩ @ 10V (Superjunction process, optimized conduction loss)
Current Capability: 7A (Stable output in TO220F package)
Technology: SJ_Multi-EPI (Multi-layer epitaxial superjunction, balancing switching performance and voltage withstand)
Package: TO220F (Fully molded insulation, reliable heat dissipation, easy installation)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
On-Resistance: 770mΩ @ 10V (Superjunction process, optimized conduction loss)
Current Capability: 7A (Stable output in TO220F package)
Technology: SJ_Multi-EPI (Multi-layer epitaxial superjunction, balancing switching performance and voltage withstand)
Package: TO220F (Fully molded insulation, reliable heat dissipation, easy installation)
Domain and module applications：
— Six High-Voltage Scenarios, One Chip Handles All
Switching Power Supply: Efficient AC-DC conversion, aiding power module miniaturization
LED Lighting Driver: High-voltage constant current solution, stable, durable, and flicker-free
Industrial Auxiliary Power Supply: Wide voltage input, strong impact resistance
Photovoltaic Inverter: DC boost and inverter stage, improving system conversion efficiency
Charging Pile Power Module: High-voltage high-power topology, reliable operation guaranteed
Motor Drive Auxiliary Power Supply: Adapts to wide temperature range and complex electromagnetic environments, providing robust support for the system STF80N600K6-VB — No panic at high voltage, efficient debut, making your power supply design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
