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CRJF900N80G2E-VB Product details
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VBsemi CRJF900N80G2E-VB is a Single N-channel field-effect transistor belonging to the VBsemi product series. This product is manufactured using SJ_Multi-EPI (superjunction multi-layer epitaxial) technology, offering excellent high-voltage withstand capability and low on-resistance, suitable for high-performance power conversion and regulation applications. The device features a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) range of ±30V, and is packaged in TO220F for easy installation and heat dissipation, making it ideal for industrial-grade power supplies and high-voltage control circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 6A | 800(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 6A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 6A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Drain-Source Voltage (VDS): 800V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 800mΩ
Maximum Drain Current (ID): 6A
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
Package: TO220F
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 800mΩ
Maximum Drain Current (ID): 6A
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
Package: TO220F
Domain and module applications：
1. Switching Power Supply (SMPS): CRJF900N80G2E-VB is suitable for primary side switching circuits in high-voltage switching power supplies, such as AC-DC converters, server power supplies, and industrial power modules, significantly improving system efficiency and reliability.
2. High-Voltage Inverter: This model can be used as a power switch in high-voltage inverter systems like photovoltaic inverters and UPS uninterruptible power supplies, effectively handling high voltage stress and reducing losses.
3. Electric Vehicle Charger: In on-board chargers and ground charging piles for electric vehicles, this MOSFET can serve as a key component in the PFC boost or DC-DC conversion stage, meeting high voltage and high stability requirements.
4. LED Lighting Driver Circuit: Suitable for high-voltage constant current control in high-power LED driver power supplies, providing stable switching performance to ensure long lifespan and high energy efficiency of the lighting system.
5. Industrial Control and Motor Drive: In high-voltage industrial control equipment, motor drivers, and power factor correction circuits, CRJF900N80G2E-VB can act as an auxiliary or main switch, coping with wide voltage input environments.
6. High-Voltage Battery Management and Protection: Used in charge-discharge control and protection circuits for energy storage systems or high-voltage battery packs, ensuring safe and reliable power switching under high-voltage conditions. Leveraging the advantages of superjunction technology—low on-resistance and high breakdown voltage—this product achieves an excellent balance of efficiency and stability in high-voltage, high-power applications, making it an ideal choice for designing compact and durable power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
