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CRJF1K4N80G2E-VB Product details
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Still troubled by insufficient voltage tolerance and high conduction losses in high-voltage switching power supplies? VBsemi CRJF1K4N80G2E-VB is here to help! This TO220F packaged single N-channel MOSFET, with its 800V high voltage tolerance and 5A continuous current capability, paired with a 1.1Ω on-resistance, easily handles high-voltage, high-frequency applications. The SJ_Multi-EPI superjunction technology delivers excellent switching characteristics and low conduction losses, making your power supply design more efficient and reliable—a 'solid foundation' for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 800V (Handles high-voltage applications with ease, ample safety margin)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Can be effectively driven by standard logic levels)
On-Resistance: 1100mΩ @ 10V (Controllable loss, lower temperature rise)
Current Capability: 5A (TO220F package offers better heat dissipation)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial process, excellent switching performance)
Package: TO220F (Fully insulated design, easy installation, reliable heat dissipation)
Drive Range: ±30V (Compatible with various gate drive solutions)
Threshold Voltage: 3.5V (Can be effectively driven by standard logic levels)
On-Resistance: 1100mΩ @ 10V (Controllable loss, lower temperature rise)
Current Capability: 5A (TO220F package offers better heat dissipation)
Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial process, excellent switching performance)
Package: TO220F (Fully insulated design, easy installation, reliable heat dissipation)
Domain and module applications：
— Six High-Voltage Scenarios, One Tube Handles All
Switching Power Supply: Main switch for high-voltage DC-DC, AC-DC, balancing efficiency and reliability
LED Lighting Driver: Wide voltage input constant current solution, stable and durable
Charging Pile and Industrial Power Supply: High withstand voltage handles harsh conditions, long-lasting operation
Inverter and UPS: High-voltage bus switching, low loss, fast response
Electric Vehicle Auxiliary Power Supply: On-board high-voltage to low-voltage conversion, impact-resistant, long lifespan
Power Factor Correction (PFC): Improves power factor, reduces harmonic interference
CRJF1K4N80G2E-VB — The way of high voltage, as stable as a rock; the road to efficiency, calm and far-reaching!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
