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CS10N80FA9D2-VB Product details

Product introduction:

CS10N80FA9D2-VB is a high-voltage, high-current N-channel MOSFET in a TO220F package, with 850V withstand voltage and 10A current capacity. Designed with Planar technology, it features an on-resistance of 1150mΩ, offering excellent withstand voltage characteristics and reliability. The wide gate drive range of ±30V provides flexible adaptability, making it suitable for various high-voltage switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 850V 3.3V 10A 1150(mΩ) Planar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 850V 3.3V 10A Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 850V 3.3V 10A Planar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Voltage: 850V
Drive Voltage: ±30V
Threshold Voltage: 3.3V
On-Resistance (10V Drive): 1150mΩ
Max Current: 10A
Package: TO220F

Domain and module applications:


Switching Power Supply → High Voltage Conversion, Stable and Efficient
LED Lighting Driver → Sufficient Withstand Voltage, Reliable Lighting
Industrial Control Circuit → High Voltage Switching, Fast Response
Inverter and UPS → Energy Conversion, Safe and Reliable
Motor Drive → High Current Carrying, Durable and Impact Resistant
Auxiliary Power Supply → Wide Voltage Adaptation, Energy Saving
High Voltage Charging Module → Precise On/Off, Adequate Protection
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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