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IPB95R310PFD7-VB Product details
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Imagine this: You are designing a high-power-density industrial power supply or electric vehicle charging module, with a bus voltage up to 900V, but facing the dual challenges of limited heat dissipation space and stringent switching losses. Ordinary high-voltage MOS transistors either have high on-resistance or insufficient reliability. The VBsemi IPB95R310PFD7-VB is designed precisely for this—it uses super junction (SJ_Multi-EPI) technology to perfectly package 900V withstand voltage, 20A current carrying capacity, and an on-resistance of only 270mΩ in the TO263 high-current housing, allowing high-voltage power supply designs to no longer compromise between efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 20A | 270(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Drain-Source Voltage 900V, easily handles high-voltage bus fluctuations
Gate Drive Range ±30V, compatible with various drive circuits
Threshold Voltage 3.5V, clear and stable switching characteristics
On-Resistance 270mΩ (at 10V drive), maintains low losses under high voltage
Maximum Current 20A, provides ample margin for high-power applications
Super-Junction Technology (SJ_Multi-EPI), optimizes balance between on-resistance and switching performance
Gate Drive Range ±30V, compatible with various drive circuits
Threshold Voltage 3.5V, clear and stable switching characteristics
On-Resistance 270mΩ (at 10V drive), maintains low losses under high voltage
Maximum Current 20A, provides ample margin for high-power applications
Super-Junction Technology (SJ_Multi-EPI), optimizes balance between on-resistance and switching performance
Domain and module applications：
Real-World Scenarios
Industrial Switching Power Supplies / LLC Resonant Converters – As a high-voltage main switch tube, effectively reduces conduction losses and improves overall efficiency.
Photovoltaic Inverters / Energy Storage Systems – Withstands DC bus high voltage, ensuring long-term stable system operation.
Electric Vehicle On-Board Chargers (OBC) – Achieves efficient power conversion on the high-voltage side, aiding lightweight design.
Charging Pile Power Modules – Leverages low on-resistance and high withstand voltage advantages to reduce heat generation and increase module power density.
High-Voltage DC-DC Converters – Suitable for new energy systems requiring voltage levels above 800V, providing reliable switching performance.
UPS Uninterruptible Power Supplies / Industrial Motor Drives – Withstands grid fluctuations and surge impacts, enhancing system robustness. One sentence summary: IPB95R310PFD7-VB is not an ordinary high-voltage MOS tube; it is the "efficiency cornerstone" and "reliable choice" for your 900V level power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
