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SiHB11N80E-VB Product details
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VBsemi SiHB11N80E-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product features high withstand voltage, low on-resistance, and good thermal stability, suitable for various high-voltage power conversion and control applications. It is manufactured using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, with a drain-source voltage (VDS) of 800V and operates at a gate-source voltage (VGS) of ±30V. The product is packaged in TO263, suitable for applications requiring efficient heat dissipation and medium-to-high power design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | 370(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Drain-Source Voltage (VDS): 800V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
Gate-Source Resistance (VGS=10V): 370 mΩ
Maximum Drain Current (ID): 13A
Technology: SJ_Multi-EPI
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
Gate-Source Resistance (VGS=10V): 370 mΩ
Maximum Drain Current (ID): 13A
Technology: SJ_Multi-EPI
Domain and module applications：
1. Switching Power Supplies: SiHB11N80E-VB is suitable for the primary side switching circuit of high-voltage switching power supplies, such as adapters, chargers, and industrial switching power supplies, providing efficient energy conversion and stable switching performance. 2. LED Lighting Drivers: In high-voltage LED lighting driver power supplies, this model can be used as a power switch tube to achieve constant current or constant voltage control, improving the power factor and overall efficiency of the lighting system. 3. Industrial Power Systems: Used in auxiliary power supplies, inverters, and DC-DC converters in industrial equipment, with 800V withstand voltage and 13A current capability, it can meet the requirements of harsh industrial working environments. 4. Photovoltaic Inverters: In distributed photovoltaic power generation systems, this device can be used in the DC-AC conversion stage of the inverter, serving as a high-voltage bus switch function to ensure reliable system operation. 5. Motor Drive Control: Suitable for power stage circuits of high-voltage motor drives, such as rectifier and inverter modules of frequency converters and servo drives, for controlling motor start/stop and speed regulation. 6. High-Voltage Battery Management: In the battery management unit of electric vehicle charging piles or energy storage systems, it can be used as a high-voltage side charge/discharge switch to improve system safety and energy efficiency. 7. Uninterruptible Power Supplies (UPS): In the rectifier and inverter circuits of UPS, this MOSFET can serve as an efficient power switch, ensuring the speed and stability of power switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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